Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.
Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.
Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.
Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Bi(111) film on GaAs(111) substrate prepared with lower-current Ar+ ion milling (S#1), yielding poorer surface reconstruction and more randomly oriented domains.
Bi(111) film on GaAs(111) substrate prepared with higher-current Ar+ ion milling (S#2), yielding reconstructed surfaces and predominantly single-domain epitaxial films.