Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy | Matter42 Literature

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Direct Orientation Contrast Imaging of Anti-Phase Domains on III-V Materials Using Scanning Electron Microscopy | Matter42 Literature

Materials

GaP

GaP

Studied Material

Also known as

orientation-patterned GaPOP-GaP

studied material

GaAs

GaAs

Substrate / Dielectric

substrate or dielectric

GaP0.4Sb0.6

GaP0.4Sb0.6

Studied Material

studied material

In0.3Ga0.7P

In0.3Ga0.7P

Studied Material

studied material

Si

Si

Substrate / Dielectric

substrate or dielectric

Si0.43Ge0.57

Si0.43Ge0.57

Substrate / Dielectric

Also known as

metamorphic buffer

substrate or dielectric

SiN

SiN

Substrate / Dielectric

Also known as

plasma-deposited SiN mask

substrate or dielectric

Growth

MBE — molecular beam epitaxy

MBE

vapor-phase deposition

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

Processing

1

Chemical Mechanical Polishing

Step 1

Process Details

applied to:OP-GaP sample

target roughness rms:1.6 nm

Samples:3 µm-thick orientation-patterned GaP grown on GaAs, later ch

Characterization

SEM

SEMExperimental

Conditions

contextdirect orientation contrast imaging

detector modeThrough Lens Detector (TLD SE and BSE modes)

working distance mm5

tilt angle deg range

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	OP-GaP film thickness	3um	GaP	3 µm-thick orientation-patterned GaP grown on GaAs, later ch	—	—
Surface Roughness Rms	RMS roughness after CMP	1.6nm	GaP	3 µm-thick orientation-patterned GaP grown on GaAs, later ch		—
Substrate Thickness	GaP film thickness	1um	GaP	GaP epilayer grown on Si, chemically-mechanically polished b	—	—
Substrate Thickness	GaP0.4Sb0.6 film thickness	1um	GaP0.4Sb0.6	GaP0.4Sb0.6 epilayer grown on Si and chemically-mechanically	—	—
Substrate Thickness	GaAs film thickness	1um	GaP	GaAs epilayer grown on Si and chemically-mechanically polish	—	—
Substrate Thickness	GaP film thickness	1um	GaP	As-grown GaP epilayer on Si that was not polished.	—	—
Substrate Thickness	In0.3Ga0.7P film thickness	270nm	In0.3Ga0.7P	As-grown In0.3Ga0.7P epilayer on a Si0.43Ge0.57 metamorphic	—	—
Substrate Thickness	Si0.43Ge0.57 buffer thickness	500nm	Si0.43Ge0.57	As-grown In0.3Ga0.7P epilayer on a Si0.43Ge0.57 metamorphic	—	—
Substrate Thickness	GaP film thickness	500nm	GaP	GaP epilayer grown on Si and polished by CMP for quantitativ	—	—

Materials

GaP

GaP

Studied Material

Also known as

orientation-patterned GaPOP-GaP

studied material

GaAs

GaAs

Substrate / Dielectric

substrate or dielectric

GaP0.4Sb0.6

GaP0.4Sb0.6

Studied Material

studied material

In0.3Ga0.7P

In0.3Ga0.7P

Studied Material

studied material

Si

Si

Substrate / Dielectric

substrate or dielectric

Si0.43Ge0.57

Si0.43Ge0.57

Substrate / Dielectric

Also known as

metamorphic buffer

substrate or dielectric

SiN

SiN

Substrate / Dielectric

Also known as

plasma-deposited SiN mask

substrate or dielectric

Growth

MBE — molecular beam epitaxy

MBE

vapor-phase deposition

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

Processing

1

Chemical Mechanical Polishing

Step 1

Process Details

applied to:OP-GaP sample

target roughness rms:1.6 nm

Samples:3 µm-thick orientation-patterned GaP grown on GaAs, later ch

Characterization

SEM

SEMExperimental

Conditions

contextdirect orientation contrast imaging

detector modeThrough Lens Detector (TLD SE and BSE modes)

working distance mm5

tilt angle deg range

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	OP-GaP film thickness	3um	GaP	3 µm-thick orientation-patterned GaP grown on GaAs, later ch	—	—
Surface Roughness Rms	RMS roughness after CMP	1.6nm	GaP	3 µm-thick orientation-patterned GaP grown on GaAs, later ch		—
Substrate Thickness	GaP film thickness	1um	GaP	GaP epilayer grown on Si, chemically-mechanically polished b	—	—
Substrate Thickness	GaP0.4Sb0.6 film thickness	1um	GaP0.4Sb0.6	GaP0.4Sb0.6 epilayer grown on Si and chemically-mechanically	—	—
Substrate Thickness	GaAs film thickness	1um	GaP	GaAs epilayer grown on Si and chemically-mechanically polish	—	—
Substrate Thickness	GaP film thickness	1um	GaP	As-grown GaP epilayer on Si that was not polished.	—	—
Substrate Thickness	In0.3Ga0.7P film thickness	270nm	In0.3Ga0.7P	As-grown In0.3Ga0.7P epilayer on a Si0.43Ge0.57 metamorphic	—	—
Substrate Thickness	Si0.43Ge0.57 buffer thickness	500nm	Si0.43Ge0.57	As-grown In0.3Ga0.7P epilayer on a Si0.43Ge0.57 metamorphic	—	—
Substrate Thickness	GaP film thickness	500nm	GaP	GaP epilayer grown on Si and polished by CMP for quantitativ	—	—

Materials

GaP

GaP

Studied Material

Also known as

orientation-patterned GaPOP-GaP

studied material

GaAs

GaAs

Substrate / Dielectric

substrate or dielectric

GaP0.4Sb0.6

GaP0.4Sb0.6

Studied Material

studied material

In0.3Ga0.7P

In0.3Ga0.7P

Studied Material

studied material

Si

Si

Substrate / Dielectric

substrate or dielectric

Si0.43Ge0.57

Si0.43Ge0.57

Substrate / Dielectric

Also known as

metamorphic buffer

substrate or dielectric

SiN

SiN

Substrate / Dielectric

Also known as

plasma-deposited SiN mask

substrate or dielectric

Growth

MBE — molecular beam epitaxy

MBE

vapor-phase deposition

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

Processing

1

Chemical Mechanical Polishing

Step 1

Process Details

applied to:OP-GaP sample

target roughness rms:1.6 nm

Samples:3 µm-thick orientation-patterned GaP grown on GaAs, later ch

Characterization

SEM

SEMExperimental

Conditions

contextdirect orientation contrast imaging

detector modeThrough Lens Detector (TLD SE and BSE modes)

working distance mm5

tilt angle deg range

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	OP-GaP film thickness	3um	GaP	3 µm-thick orientation-patterned GaP grown on GaAs, later ch	—	—
Surface Roughness Rms	RMS roughness after CMP	1.6nm	GaP	3 µm-thick orientation-patterned GaP grown on GaAs, later ch		—
Substrate Thickness	GaP film thickness	1um	GaP	GaP epilayer grown on Si, chemically-mechanically polished b	—	—
Substrate Thickness	GaP0.4Sb0.6 film thickness	1um	GaP0.4Sb0.6	GaP0.4Sb0.6 epilayer grown on Si and chemically-mechanically	—	—
Substrate Thickness	GaAs film thickness	1um	GaP	GaAs epilayer grown on Si and chemically-mechanically polish	—	—
Substrate Thickness	GaP film thickness	1um	GaP	As-grown GaP epilayer on Si that was not polished.	—	—
Substrate Thickness	In0.3Ga0.7P film thickness	270nm	In0.3Ga0.7P	As-grown In0.3Ga0.7P epilayer on a Si0.43Ge0.57 metamorphic	—	—
Substrate Thickness	Si0.43Ge0.57 buffer thickness	500nm	Si0.43Ge0.57	As-grown In0.3Ga0.7P epilayer on a Si0.43Ge0.57 metamorphic	—	—
Substrate Thickness	GaP film thickness	500nm	GaP	GaP epilayer grown on Si and polished by CMP for quantitativ	—	—

Materials

GaP

GaP

Studied Material

Also known as

orientation-patterned GaPOP-GaP

studied material

GaAs

GaAs

Substrate / Dielectric

substrate or dielectric

GaP0.4Sb0.6

GaP0.4Sb0.6

Studied Material

studied material

In0.3Ga0.7P

In0.3Ga0.7P

Studied Material

studied material

Si

Si

Substrate / Dielectric

substrate or dielectric

Si0.43Ge0.57

Si0.43Ge0.57

Substrate / Dielectric

Also known as

metamorphic buffer

substrate or dielectric

SiN

SiN

Substrate / Dielectric

Also known as

plasma-deposited SiN mask

substrate or dielectric

Growth

MBE — molecular beam epitaxy

MBE

vapor-phase deposition

Parameters

Temperature—

Pressure—

Flow Rate—

Growth Time—

Ramp Rate—

Chemistry

Precursors

Processing

1

Chemical Mechanical Polishing

Step 1

Process Details

applied to:OP-GaP sample

target roughness rms:1.6 nm

Samples:3 µm-thick orientation-patterned GaP grown on GaAs, later ch

Characterization

SEM

SEMExperimental

Conditions

contextdirect orientation contrast imaging

detector modeThrough Lens Detector (TLD SE and BSE modes)

working distance mm5

tilt angle deg range

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	OP-GaP film thickness	3um	GaP	3 µm-thick orientation-patterned GaP grown on GaAs, later ch	—	—
Surface Roughness Rms	RMS roughness after CMP	1.6nm	GaP	3 µm-thick orientation-patterned GaP grown on GaAs, later ch		—
Substrate Thickness	GaP film thickness	1um	GaP	GaP epilayer grown on Si, chemically-mechanically polished b	—	—
Substrate Thickness	GaP0.4Sb0.6 film thickness	1um	GaP0.4Sb0.6	GaP0.4Sb0.6 epilayer grown on Si and chemically-mechanically	—	—
Substrate Thickness	GaAs film thickness	1um	GaP	GaAs epilayer grown on Si and chemically-mechanically polish	—	—
Substrate Thickness	GaP film thickness	1um	GaP	As-grown GaP epilayer on Si that was not polished.	—	—
Substrate Thickness	In0.3Ga0.7P film thickness	270nm	In0.3Ga0.7P	As-grown In0.3Ga0.7P epilayer on a Si0.43Ge0.57 metamorphic	—	—
Substrate Thickness	Si0.43Ge0.57 buffer thickness	500nm	Si0.43Ge0.57	As-grown In0.3Ga0.7P epilayer on a Si0.43Ge0.57 metamorphic	—	—
Substrate Thickness	GaP film thickness	500nm	GaP	GaP epilayer grown on Si and polished by CMP for quantitativ	—	—