Research paperExperimental GrowthExperimental CharacterizationComputational DFTDoubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilmsChing-Chen Yeh, Thi-Hien Do, Pin-Chi Liao, Chia-Hung Hsu et al.2025·10.1103/PhysRevMaterials.7.114801·arXiv:2305.06084AbstractSuperconducting properties of thin films can be vastly different from those of bulk materials. The paper reports wafer-scale molecular-beam-epitaxy-grown ultra-thin aluminum nanofilms on GaAs, sapphire, and Si, finding that Tc increases with decreasing thickness and reaches 2.4 K for a 3.5 nm Al film on GaAs, about twice the bulk Tc of 1.2 K. Transport, AFM, XRD, and TEM/STEM measurements show high-quality epitaxial ultrathin films, and DFT calculations indicate that surface phonon softening can contribute to the superconducting enhancement.Read more
3.5-nm-thick Al nanofilm grown on GaAs.1 preparation4 characterizations4 properties5 figuresExperimentalAlStudied MaterialGaAsSubstrate / DielectricExpand
3.5-nm-thick Al nanofilm grown on sapphire.1 preparation4 characterizations3 properties5 figuresExperimentalAlStudied MaterialAl₂O₃Substrate / DielectricExpand
3.5-nm-thick Al nanofilm grown on Si.1 preparation4 characterizations3 properties5 figuresExperimentalAlStudied MaterialSiSubstrate / DielectricExpand
20-nm-thick Al nanofilm grown on GaAs, approaching bulk Tc.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialGaAsSubstrate / DielectricExpand
20-nm-thick Al nanofilm grown on sapphire.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialAl₂O₃Substrate / DielectricExpand
20-nm-thick Al nanofilm grown on Si.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialSiSubstrate / DielectricExpand
Bulk Al reference used for comparison of superconducting transition temperature.1 characterization2 figuresReferenceAlStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTDoubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilmsChing-Chen Yeh, Thi-Hien Do, Pin-Chi Liao, Chia-Hung Hsu et al.2025·10.1103/PhysRevMaterials.7.114801·arXiv:2305.06084AbstractSuperconducting properties of thin films can be vastly different from those of bulk materials. The paper reports wafer-scale molecular-beam-epitaxy-grown ultra-thin aluminum nanofilms on GaAs, sapphire, and Si, finding that Tc increases with decreasing thickness and reaches 2.4 K for a 3.5 nm Al film on GaAs, about twice the bulk Tc of 1.2 K. Transport, AFM, XRD, and TEM/STEM measurements show high-quality epitaxial ultrathin films, and DFT calculations indicate that surface phonon softening can contribute to the superconducting enhancement.Read more
3.5-nm-thick Al nanofilm grown on GaAs.1 preparation4 characterizations4 properties5 figuresExperimentalAlStudied MaterialGaAsSubstrate / DielectricExpand
3.5-nm-thick Al nanofilm grown on sapphire.1 preparation4 characterizations3 properties5 figuresExperimentalAlStudied MaterialAl₂O₃Substrate / DielectricExpand
3.5-nm-thick Al nanofilm grown on Si.1 preparation4 characterizations3 properties5 figuresExperimentalAlStudied MaterialSiSubstrate / DielectricExpand
20-nm-thick Al nanofilm grown on GaAs, approaching bulk Tc.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialGaAsSubstrate / DielectricExpand
20-nm-thick Al nanofilm grown on sapphire.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialAl₂O₃Substrate / DielectricExpand
20-nm-thick Al nanofilm grown on Si.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialSiSubstrate / DielectricExpand
Bulk Al reference used for comparison of superconducting transition temperature.1 characterization2 figuresReferenceAlStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTDoubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilmsChing-Chen Yeh, Thi-Hien Do, Pin-Chi Liao, Chia-Hung Hsu et al.2025·10.1103/PhysRevMaterials.7.114801·arXiv:2305.06084AbstractSuperconducting properties of thin films can be vastly different from those of bulk materials. The paper reports wafer-scale molecular-beam-epitaxy-grown ultra-thin aluminum nanofilms on GaAs, sapphire, and Si, finding that Tc increases with decreasing thickness and reaches 2.4 K for a 3.5 nm Al film on GaAs, about twice the bulk Tc of 1.2 K. Transport, AFM, XRD, and TEM/STEM measurements show high-quality epitaxial ultrathin films, and DFT calculations indicate that surface phonon softening can contribute to the superconducting enhancement.Read more
3.5-nm-thick Al nanofilm grown on GaAs.1 preparation4 characterizations4 properties5 figuresExperimentalAlStudied MaterialGaAsSubstrate / DielectricExpand
3.5-nm-thick Al nanofilm grown on sapphire.1 preparation4 characterizations3 properties5 figuresExperimentalAlStudied MaterialAl₂O₃Substrate / DielectricExpand
3.5-nm-thick Al nanofilm grown on Si.1 preparation4 characterizations3 properties5 figuresExperimentalAlStudied MaterialSiSubstrate / DielectricExpand
20-nm-thick Al nanofilm grown on GaAs, approaching bulk Tc.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialGaAsSubstrate / DielectricExpand
20-nm-thick Al nanofilm grown on sapphire.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialAl₂O₃Substrate / DielectricExpand
20-nm-thick Al nanofilm grown on Si.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialSiSubstrate / DielectricExpand
Bulk Al reference used for comparison of superconducting transition temperature.1 characterization2 figuresReferenceAlStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTDoubling of the superconducting transition temperature in ultra-clean wafer-scale aluminum nanofilmsChing-Chen Yeh, Thi-Hien Do, Pin-Chi Liao, Chia-Hung Hsu et al.2025·10.1103/PhysRevMaterials.7.114801·arXiv:2305.06084AbstractSuperconducting properties of thin films can be vastly different from those of bulk materials. The paper reports wafer-scale molecular-beam-epitaxy-grown ultra-thin aluminum nanofilms on GaAs, sapphire, and Si, finding that Tc increases with decreasing thickness and reaches 2.4 K for a 3.5 nm Al film on GaAs, about twice the bulk Tc of 1.2 K. Transport, AFM, XRD, and TEM/STEM measurements show high-quality epitaxial ultrathin films, and DFT calculations indicate that surface phonon softening can contribute to the superconducting enhancement.Read more
3.5-nm-thick Al nanofilm grown on GaAs.1 preparation4 characterizations4 properties5 figuresExperimentalAlStudied MaterialGaAsSubstrate / DielectricExpand
3.5-nm-thick Al nanofilm grown on sapphire.1 preparation4 characterizations3 properties5 figuresExperimentalAlStudied MaterialAl₂O₃Substrate / DielectricExpand
3.5-nm-thick Al nanofilm grown on Si.1 preparation4 characterizations3 properties5 figuresExperimentalAlStudied MaterialSiSubstrate / DielectricExpand
20-nm-thick Al nanofilm grown on GaAs, approaching bulk Tc.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialGaAsSubstrate / DielectricExpand
20-nm-thick Al nanofilm grown on sapphire.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialAl₂O₃Substrate / DielectricExpand
20-nm-thick Al nanofilm grown on Si.1 preparation1 characterization2 figuresExperimentalAlStudied MaterialSiSubstrate / DielectricExpand
Bulk Al reference used for comparison of superconducting transition temperature.1 characterization2 figuresReferenceAlStudied MaterialExpand