Research paperExperimental GrowthExperimental CharacterizationSingle photon emitters in thin GaAsN nanowire tubes grown on SiNadine Denis, Didem Dede, Timur Nurmamytov, Salvatore Cianci et al.arXiv·2024·10.1021/acsnano.5c12139·arXiv:2411.03185AbstractIII-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electronic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056.Read more
Thin GaAs/GaAsN/GaAs core-multishell nanowire tube sample A grown monolithically on Si(111); nominal GaAs core diameter 20 nm, GaAsN shell 10 nm, GaAs outer shell 10 nm.1 preparation5 characterizations8 properties2 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Thin GaAs/GaAsN/GaAs core-multishell nanowire tube sample B grown monolithically on Si(111); nominal GaAs core diameter 40 nm, GaAsN shell 10 nm, GaAs outer shell 10 nm.1 preparation3 characterizations3 properties1 figureExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationSingle photon emitters in thin GaAsN nanowire tubes grown on SiNadine Denis, Didem Dede, Timur Nurmamytov, Salvatore Cianci et al.arXiv·2024·10.1021/acsnano.5c12139·arXiv:2411.03185AbstractIII-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electronic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056.Read more
Thin GaAs/GaAsN/GaAs core-multishell nanowire tube sample A grown monolithically on Si(111); nominal GaAs core diameter 20 nm, GaAsN shell 10 nm, GaAs outer shell 10 nm.1 preparation5 characterizations8 properties2 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Thin GaAs/GaAsN/GaAs core-multishell nanowire tube sample B grown monolithically on Si(111); nominal GaAs core diameter 40 nm, GaAsN shell 10 nm, GaAs outer shell 10 nm.1 preparation3 characterizations3 properties1 figureExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationSingle photon emitters in thin GaAsN nanowire tubes grown on SiNadine Denis, Didem Dede, Timur Nurmamytov, Salvatore Cianci et al.arXiv·2024·10.1021/acsnano.5c12139·arXiv:2411.03185AbstractIII-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electronic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056.Read more
Thin GaAs/GaAsN/GaAs core-multishell nanowire tube sample A grown monolithically on Si(111); nominal GaAs core diameter 20 nm, GaAsN shell 10 nm, GaAs outer shell 10 nm.1 preparation5 characterizations8 properties2 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Thin GaAs/GaAsN/GaAs core-multishell nanowire tube sample B grown monolithically on Si(111); nominal GaAs core diameter 40 nm, GaAsN shell 10 nm, GaAs outer shell 10 nm.1 preparation3 characterizations3 properties1 figureExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationSingle photon emitters in thin GaAsN nanowire tubes grown on SiNadine Denis, Didem Dede, Timur Nurmamytov, Salvatore Cianci et al.arXiv·2024·10.1021/acsnano.5c12139·arXiv:2411.03185AbstractIII-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate lattice-mismatched components beyond the limits of planar epilayers and to create radially and axially confined quantum structures. Here, we report the plasma-assisted molecular beam epitaxy growth of thin GaAs/GaAsN/GaAs core-multishell nanowires monolithically integrated on Si (111) substrates, overcoming the challenges caused by the low solubility of N and a high lattice mismatch. The nanowires have a GaAsN shell of 10 nm containing 2.7% N, which reduces the GaAs bandgap drastically by 400 meV. They have a symmetric core-shell structure with sharp boundaries and a defect-free zincblende phase. The high structural quality reflects in their excellent opto-electronic properties, including remarkable single photon emission from quantum confined states in the thin GaAsN shell with a second-order autocorrelation function at zero time delay as low as 0.056.Read more
Thin GaAs/GaAsN/GaAs core-multishell nanowire tube sample A grown monolithically on Si(111); nominal GaAs core diameter 20 nm, GaAsN shell 10 nm, GaAs outer shell 10 nm.1 preparation5 characterizations8 properties2 figuresExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
Thin GaAs/GaAsN/GaAs core-multishell nanowire tube sample B grown monolithically on Si(111); nominal GaAs core diameter 40 nm, GaAsN shell 10 nm, GaAs outer shell 10 nm.1 preparation3 characterizations3 properties1 figureExperimentalGaAsStudied MaterialGaAsNStudied MaterialExpand
