Abstract

We report GaAs/AlGaAs nanowires in the one-dimensional quantum limit. The ultra-thin wurtzite GaAs cores between 20-40 nm induce large confinement energies of several tens of meV, allowing experimental resolution of up to four well separated subband excitations in microphotoluminescence spectroscopy. Detailed experimental and theoretical polarization-resolved study reveals a strong diameter-dependent anisotropy of these transitions, governed both by the symmetry of the wurtzite 1D quantum wire subbands and by dielectric mismatch with the surrounding material. Including dielectric mismatch in k·p-based simulated polarization-resolved spectra of purely wurtzite GaAs quantum wires yields excellent agreement with experiment.

Abstract

We report GaAs/AlGaAs nanowires in the one-dimensional quantum limit. The ultra-thin wurtzite GaAs cores between 20-40 nm induce large confinement energies of several tens of meV, allowing experimental resolution of up to four well separated subband excitations in microphotoluminescence spectroscopy. Detailed experimental and theoretical polarization-resolved study reveals a strong diameter-dependent anisotropy of these transitions, governed both by the symmetry of the wurtzite 1D quantum wire subbands and by dielectric mismatch with the surrounding material. Including dielectric mismatch in k·p-based simulated polarization-resolved spectra of purely wurtzite GaAs quantum wires yields excellent agreement with experiment.

Abstract

We report GaAs/AlGaAs nanowires in the one-dimensional quantum limit. The ultra-thin wurtzite GaAs cores between 20-40 nm induce large confinement energies of several tens of meV, allowing experimental resolution of up to four well separated subband excitations in microphotoluminescence spectroscopy. Detailed experimental and theoretical polarization-resolved study reveals a strong diameter-dependent anisotropy of these transitions, governed both by the symmetry of the wurtzite 1D quantum wire subbands and by dielectric mismatch with the surrounding material. Including dielectric mismatch in k·p-based simulated polarization-resolved spectra of purely wurtzite GaAs quantum wires yields excellent agreement with experiment.

Abstract

We report GaAs/AlGaAs nanowires in the one-dimensional quantum limit. The ultra-thin wurtzite GaAs cores between 20-40 nm induce large confinement energies of several tens of meV, allowing experimental resolution of up to four well separated subband excitations in microphotoluminescence spectroscopy. Detailed experimental and theoretical polarization-resolved study reveals a strong diameter-dependent anisotropy of these transitions, governed both by the symmetry of the wurtzite 1D quantum wire subbands and by dielectric mismatch with the surrounding material. Including dielectric mismatch in k·p-based simulated polarization-resolved spectra of purely wurtzite GaAs quantum wires yields excellent agreement with experiment.