Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Viola Zeller; Nadine Mundigl; Paulo E. Faria Junior; Jaroslav Fabian; Christian Schüller; Dominique Bougeard

doi:10.1103/PhysRevApplied.18.054014

Paper details

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Viola Zeller, Nadine Mundigl, Paulo E. Faria Junior, Jaroslav Fabian et al.

arXiv preprint·2022·10.1103/PhysRevApplied.18.054014·arXiv:2204.09991

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

1 preparation1 characterization2 properties1 figure

ExperimentalGaAsStudied MaterialAuCatalyst SubstrateGaAsSubstrate / Dielectric

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

1 preparation1 characterization1 property1 figure

ExperimentalGaAsStudied MaterialAl0.38Ga0.62AsStudied MaterialAuCatalyst SubstrateGaAsSubstrate / Dielectric

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

1 preparation1 characterization1 property1 figure

ExperimentalGaAsStudied MaterialAl0.38Ga0.62AsStudied MaterialAuCatalyst SubstrateGaAsSubstrate / Dielectric

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

1 preparation1 characterization2 properties1 figure

ExperimentalGaAsStudied MaterialAl0.38Ga0.62AsStudied MaterialAuCatalyst SubstrateGaAsSubstrate / Dielectric

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

1 preparation1 characterization3 properties1 figure

ExperimentalGaAsStudied MaterialAl0.38Ga0.62AsStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Materials

GaAs

Studied Material

Also known as

wurtzite GaAs core

Variables

phase= wurtzite

studied material

Al0.38Ga0.62As

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	thermal SiO₂ thickness	300nm	SiO₂	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—
Nanowire Diameter	wire diameter	30nm	GaAs	Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on	—
Nanowire Diameter	total wire diameter	70nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell	—
Nanowire Diameter	total wire diameter	160nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediat	—
Nanowire Diameter	total wire diameter	220nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell	—
Nanowire Length	wire length	2um	GaAs	Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on	—
Nanowire Length	wire length	3um	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell	—
PL Peak	ground-state emission peak 1	1.515eV	GaAs	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—
PL Peak	ground-state emission peak 1	1.548eV	GaAs	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	thermal SiO₂ thickness	300nm	SiO₂	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—
Nanowire Diameter	wire diameter	30nm	GaAs	Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on	—
Nanowire Diameter	total wire diameter	70nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell	—
Nanowire Diameter	total wire diameter	160nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediat	—
Nanowire Diameter	total wire diameter	220nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell	—
Nanowire Length	wire length	2um	GaAs	Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on	—
Nanowire Length	wire length	3um	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell	—
PL Peak	ground-state emission peak 1	1.515eV	GaAs	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—
PL Peak	ground-state emission peak 1	1.548eV	GaAs	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	thermal SiO₂ thickness	300nm	SiO₂	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—
Nanowire Diameter	wire diameter	30nm	GaAs	Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on	—
Nanowire Diameter	total wire diameter	70nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell	—
Nanowire Diameter	total wire diameter	160nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediat	—
Nanowire Diameter	total wire diameter	220nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell	—
Nanowire Length	wire length	2um	GaAs	Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on	—
Nanowire Length	wire length	3um	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell	—
PL Peak	ground-state emission peak 1	1.515eV	GaAs	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—
PL Peak	ground-state emission peak 1	1.548eV	GaAs	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	thermal SiO₂ thickness	300nm	SiO₂	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—
Nanowire Diameter	wire diameter	30nm	GaAs	Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on	—
Nanowire Diameter	total wire diameter	70nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell	—
Nanowire Diameter	total wire diameter	160nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediat	—
Nanowire Diameter	total wire diameter	220nm	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell	—
Nanowire Length	wire length	2um	GaAs	Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on	—
Nanowire Length	wire length	3um	GaAs Al0.38Ga0.62As	Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell	—
PL Peak	ground-state emission peak 1	1.515eV	GaAs	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—
PL Peak	ground-state emission peak 1	1.548eV	GaAs	Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si ch	—

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Samples

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

Materials

Why these are connected

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Samples

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

Materials

Why these are connected

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Samples

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

Materials

Why these are connected

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Samples

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

Materials

Why these are connected

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Samples

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

Materials

Why these are connected

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Samples

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

Materials

Why these are connected

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Samples

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

Materials

Why these are connected

Wurtzite quantum wires with strong spatial confinement: polarization anisotropies in single wire spectroscopy

Samples

Pure wurtzite GaAs quantum wire grown by Au-catalyzed MBE on semi-insulating GaAs(111)B substrate; representative core-only wire without AlGaAs shell.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thin shell corresponding to a total diameter of about 70 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with intermediate shell thickness corresponding to a total diameter of about 160 nm.

Core/shell GaAs/Al0.38Ga0.62As quantum wire with thick shell corresponding to a total diameter of about 220 nm.

Single nanowire dispersed onto a 300 nm SiO₂ / p-doped Si chip for microphotoluminescence measurements.

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization