Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A single 14 nm thick GaAs/AlGaAs quantum well grown on a (100)-oriented GaAs substrate and patterned into a multi-terminal Hall bar channel for photocurrent and time-resolved PL measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A single 14 nm thick GaAs/AlGaAs quantum well grown on a (100)-oriented GaAs substrate and patterned into a multi-terminal Hall bar channel for photocurrent and time-resolved PL measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A single 14 nm thick GaAs/AlGaAs quantum well grown on a (100)-oriented GaAs substrate and patterned into a multi-terminal Hall bar channel for photocurrent and time-resolved PL measurements.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
A single 14 nm thick GaAs/AlGaAs quantum well grown on a (100)-oriented GaAs substrate and patterned into a multi-terminal Hall bar channel for photocurrent and time-resolved PL measurements.
