The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

P. R. Ramesh; E. Annoni; N. Margaria; D. A. Fioretto; A. Pishchagin; M. Morassi; A. Lemaître; M. F. Doty; P. Senellart; L. Lanco; N. Belabas; S. C. Wein; O. Krebs

doi:10.1103/vh7c-j3ms

Paper details

Research paper

Experimental CharacterizationTheoreticalComputational Multiscale

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

P. R. Ramesh, E. Annoni, N. Margaria, D. A. Fioretto et al.

arXiv preprint·2025·10.1103/vh7c-j3ms·arXiv:2502.07627

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

2 preparations1 characterization2 properties2 figures

ExperimentalInGaAsStudied MaterialGaAsSubstrate / DielectricAlxGa₁-xAsSubstrate / Dielectric

Materials

InGaAs quantum dots

InGaAs

Studied Material

Also known as

InGaAs QDsself-assembled InGaAs QDs

studied material

GaAs

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	QD emission	923.9nm	InGaAs	Single self-assembled InGaAs quantum dot embedded in a GaAs		—
G Factor Angle Offset	theta₀	-28deg	InGaAs	Single self-assembled InGaAs quantum dot embedded in a GaAs		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	QD emission	923.9nm	InGaAs	Single self-assembled InGaAs quantum dot embedded in a GaAs		—
G Factor Angle Offset	theta₀	-28deg	InGaAs	Single self-assembled InGaAs quantum dot embedded in a GaAs		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	QD emission	923.9nm	InGaAs	Single self-assembled InGaAs quantum dot embedded in a GaAs		—
G Factor Angle Offset	theta₀	-28deg	InGaAs	Single self-assembled InGaAs quantum dot embedded in a GaAs		—

Properties

Type	Label	Value	Material	Sample	Condition	Source
PL Peak	QD emission	923.9nm	InGaAs	Single self-assembled InGaAs quantum dot embedded in a GaAs		—
G Factor Angle Offset	theta₀	-28deg	InGaAs	Single self-assembled InGaAs quantum dot embedded in a GaAs		—

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

Samples

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

Materials

Why these are connected

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

Samples

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

Materials

Why these are connected

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

Samples

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

Materials

Why these are connected

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

Samples

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

Materials

Why these are connected

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

Samples

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

Materials

Why these are connected

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

Samples

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

Materials

Why these are connected

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

Samples

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

Materials

Why these are connected

The impact of hole g-factor anisotropy on spin-photon entanglement generation with InGaAs quantum dots

Samples

Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.

Materials

Why these are connected

Growth

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Growth

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Growth

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Growth

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