Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single self-assembled InGaAs quantum dot embedded in a GaAs matrix, annealed post-growth and incorporated into a n-i-p diode structure with a 3λ GaAs cavity between AlxGa₁-xAs/GaAs DBRs.