Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Valentin Jmerik; Dmitrii Nechaev; Evgenii Evropeitsev; Evgenii Roginskii; Maria Yagovkina; Prokhor Alekseev; Alexey Semenov; Vladimir Kozlovsky; Mikhail Zverev; Nikita Gamov; Tao Wang; Xinqiang Wang; Tatiana Shubina; Alexey Toropov

doi:10.1103/RevModPhys.73.767

Paper

Atlas literature

Research paper

Experimental GrowthExperimental CharacterizationComputational DFT

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Valentin Jmerik, Dmitrii Nechaev, Evgenii Evropeitsev, Evgenii Roginskii et al.

2025·arXiv:2601.08410

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications | Matter42 Literature

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Samples

250×{GaNm/AlNn} multiple quantum well structure from the thickness-series T-m with m = 0.75–2 ML in 0.25-ML increments at fixed Ga-to-activated-nitrogen flux ratio 1.5; terminated by 15-ML AlN layers.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phi_Ga/phi_N2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 2.1.

250×{GaNm/AlNn} structure used for UVC emission measurements and electron-beam pumping demonstration.

Ab initio model system for GaN/AlN quantum wells with fractional-monolayer and bilayer well configurations used in the electronic-structure calculations.

Why these are connected

Samples

250×{GaNm/AlNn} multiple quantum well structure from the thickness-series T-m with m = 0.75–2 ML in 0.25-ML increments at fixed Ga-to-activated-nitrogen flux ratio 1.5; terminated by 15-ML AlN layers.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phi_Ga/phi_N2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 2.1.

250×{GaNm/AlNn} structure used for UVC emission measurements and electron-beam pumping demonstration.

Ab initio model system for GaN/AlN quantum wells with fractional-monolayer and bilayer well configurations used in the electronic-structure calculations.

Why these are connected

Samples

250×{GaNm/AlNn} multiple quantum well structure from the thickness-series T-m with m = 0.75–2 ML in 0.25-ML increments at fixed Ga-to-activated-nitrogen flux ratio 1.5; terminated by 15-ML AlN layers.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phi_Ga/phi_N2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 2.1.

250×{GaNm/AlNn} structure used for UVC emission measurements and electron-beam pumping demonstration.

Ab initio model system for GaN/AlN quantum wells with fractional-monolayer and bilayer well configurations used in the electronic-structure calculations.

Why these are connected

Samples

250×{GaNm/AlNn} multiple quantum well structure from the thickness-series T-m with m = 0.75–2 ML in 0.25-ML increments at fixed Ga-to-activated-nitrogen flux ratio 1.5; terminated by 15-ML AlN layers.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phi_Ga/phi_N2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 2.1.

250×{GaNm/AlNn} structure used for UVC emission measurements and electron-beam pumping demonstration.

Ab initio model system for GaN/AlN quantum wells with fractional-monolayer and bilayer well configurations used in the electronic-structure calculations.

Why these are connected

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications

Samples

250×{GaNm/AlNn} multiple quantum well structure from the thickness-series T-m with m = 0.75–2 ML in 0.25-ML increments at fixed Ga-to-activated-nitrogen flux ratio 1.5; terminated by 15-ML AlN layers.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phiGa/phiN2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phiGa/phiN2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phiGa/phiN2* = 2.1.

250×{GaNm/AlNn} structure used for UVC emission measurements and electron-beam pumping demonstration.

Ab initio model system for GaN/AlN quantum wells with fractional-monolayer and bilayer well configurations used in the electronic-structure calculations.

Why these are connected

Samples

250×{GaNm/AlNn} multiple quantum well structure from the thickness-series T-m with m = 0.75–2 ML in 0.25-ML increments at fixed Ga-to-activated-nitrogen flux ratio 1.5; terminated by 15-ML AlN layers.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phiGa/phiN2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phiGa/phiN2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phiGa/phiN2* = 2.1.

250×{GaNm/AlNn} structure used for UVC emission measurements and electron-beam pumping demonstration.

Ab initio model system for GaN/AlN quantum wells with fractional-monolayer and bilayer well configurations used in the electronic-structure calculations.

Why these are connected

Samples

250×{GaNm/AlNn} multiple quantum well structure from the thickness-series T-m with m = 0.75–2 ML in 0.25-ML increments at fixed Ga-to-activated-nitrogen flux ratio 1.5; terminated by 15-ML AlN layers.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phiGa/phiN2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phiGa/phiN2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phiGa/phiN2* = 2.1.

250×{GaNm/AlNn} structure used for UVC emission measurements and electron-beam pumping demonstration.

Ab initio model system for GaN/AlN quantum wells with fractional-monolayer and bilayer well configurations used in the electronic-structure calculations.

Why these are connected

Samples

250×{GaNm/AlNn} multiple quantum well structure from the thickness-series T-m with m = 0.75–2 ML in 0.25-ML increments at fixed Ga-to-activated-nitrogen flux ratio 1.5; terminated by 15-ML AlN layers.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phiGa/phiN2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phiGa/phiN2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phiGa/phiN2* = 2.1.

250×{GaNm/AlNn} structure used for UVC emission measurements and electron-beam pumping demonstration.

Ab initio model system for GaN/AlN quantum wells with fractional-monolayer and bilayer well configurations used in the electronic-structure calculations.

Why these are connected

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phi_Ga/phi_N2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 2.1.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phi_Ga/phi_N2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 2.1.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phi_Ga/phi_N2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 2.1.

250×{GaNm/AlNn} multiple quantum well structure from the flux-series F-(phi_Ga/phi_N2*) with m = 1.5 ML at varying Ga-to-activated-nitrogen flux ratio 0.7–2.1; terminated by 15-ML AlN layers.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 1.1.

Control 1.5-ML GaN QW grown on top of the T-series structure at phi_Ga/phi_N2* = 2.1.