Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.
Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.
Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.
Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Single self-assembled quantum dot QD₁ embedded in a p-i-n diode structure with InAs/GaAs quantum-dot active region and GaAs/AlGaAs microcavity layers; post-growth rapid thermal annealed.
Single self-assembled quantum dot QD₂ in the same p-i-n diode / microcavity heterostructure used for resonance-fluorescence comparison; post-growth rapid thermal annealed.
