Growth of compositionally uniform InxGa1−xN layers with low relaxation degree on GaN by molecular beam epitaxy

Paper details

Research paper

Experimental GrowthExperimental Characterization

Jingxuan Kang, Mikel Gómez Ruiz, Duc Van Dinh, Aidan F Campbell et al.

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation8 characterizations6 properties3 figures

ExperimentalInxGa1−xNStudied MaterialGaNSubstrate / Dielectric

2 characterizations4 properties1 figure

ReferenceGaNSubstrate / Dielectric

InxGa1−xN

Studied Material

Also known as

InGaNIn0.12Ga0.88N

Variables

thickness_nm= 500

composition_x_range= 0.05-0.14

studied material

Related documents with shared materials, methods, properties, or citations.

Growth of compositionally uniform InxGa1−xN layers with low relaxation degree on GaN by molecular beam epitaxy | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Xrd Rocking Fwhm	(0002)	417arcsec	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Xrd Rocking Fwhm	(10-12)	633arcsec	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Xrd Rocking Fwhm	(0002)	286arcsec	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Xrd Rocking Fwhm	(10-12)	449arcsec	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Strain Relaxation	relaxation degree	10%	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Threading Dislocation Density	TD density	1000000000cm⁻²	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer Commercial GaN(0001) template used as the substrate/referenc		—
Threading Dislocation Density	TD density	200000000cm⁻²	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Surface Roughness Rms	RMS roughness	1.9nm	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Pl Peak Shift	peak emission wavelength variation	3nm	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
PL Peak	regex-detected PL peak	325nm	InxGa1−xN	—	—	—
Pl Peak Fwhm	PL peak	76meV	InxGa1−xN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Xrd Rocking Fwhm	(0002)	417arcsec	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Xrd Rocking Fwhm	(10-12)	633arcsec	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Xrd Rocking Fwhm	(0002)	286arcsec	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Xrd Rocking Fwhm	(10-12)	449arcsec	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Strain Relaxation	relaxation degree	10%	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Threading Dislocation Density	TD density	1000000000cm⁻²	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer Commercial GaN(0001) template used as the substrate/referenc		—
Threading Dislocation Density	TD density	200000000cm⁻²	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Surface Roughness Rms	RMS roughness	1.9nm	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Pl Peak Shift	peak emission wavelength variation	3nm	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
PL Peak	regex-detected PL peak	325nm	InxGa1−xN	—	—	—
Pl Peak Fwhm	PL peak	76meV	InxGa1−xN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Xrd Rocking Fwhm	(0002)	417arcsec	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Xrd Rocking Fwhm	(10-12)	633arcsec	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Xrd Rocking Fwhm	(0002)	286arcsec	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Xrd Rocking Fwhm	(10-12)	449arcsec	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Strain Relaxation	relaxation degree	10%	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Threading Dislocation Density	TD density	1000000000cm⁻²	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer Commercial GaN(0001) template used as the substrate/referenc		—
Threading Dislocation Density	TD density	200000000cm⁻²	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Surface Roughness Rms	RMS roughness	1.9nm	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Pl Peak Shift	peak emission wavelength variation	3nm	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
PL Peak	regex-detected PL peak	325nm	InxGa1−xN	—	—	—
Pl Peak Fwhm	PL peak	76meV	InxGa1−xN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Xrd Rocking Fwhm	(0002)	417arcsec	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Xrd Rocking Fwhm	(10-12)	633arcsec	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Xrd Rocking Fwhm	(0002)	286arcsec	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Xrd Rocking Fwhm	(10-12)	449arcsec	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Strain Relaxation	relaxation degree	10%	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Threading Dislocation Density	TD density	1000000000cm⁻²	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer Commercial GaN(0001) template used as the substrate/referenc		—
Threading Dislocation Density	TD density	200000000cm⁻²	GaN	Commercial GaN(0001) template used as the substrate/referenc		—
Surface Roughness Rms	RMS roughness	1.9nm	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
Pl Peak Shift	peak emission wavelength variation	3nm	InxGa1−xN	500-nm-thick In0.12Ga0.88N layer grown by PA-MBE on a commer		—
PL Peak	regex-detected PL peak	325nm	InxGa1−xN	—	—	—
Pl Peak Fwhm	PL peak	76meV	InxGa1−xN	—	—	—