Abstract

500-nm-thick InxGa1−xN layers with x = 0.05–0.14 were grown by plasma-assisted molecular beam epitaxy on commercial GaN(0001) templates. The layers were characterized by XRD, AFM, CL, SIMS, TEM, and room-temperature PL. The paper reports low strain relaxation (10% for x = 0.12), low threading-dislocation density (~1 × 10⁹ cm⁻²), uniform composition in both growth and lateral directions, and a narrow emission band.

Abstract

500-nm-thick InxGa1−xN layers with x = 0.05–0.14 were grown by plasma-assisted molecular beam epitaxy on commercial GaN(0001) templates. The layers were characterized by XRD, AFM, CL, SIMS, TEM, and room-temperature PL. The paper reports low strain relaxation (10% for x = 0.12), low threading-dislocation density (~1 × 10⁹ cm⁻²), uniform composition in both growth and lateral directions, and a narrow emission band.

Abstract

500-nm-thick InxGa1−xN layers with x = 0.05–0.14 were grown by plasma-assisted molecular beam epitaxy on commercial GaN(0001) templates. The layers were characterized by XRD, AFM, CL, SIMS, TEM, and room-temperature PL. The paper reports low strain relaxation (10% for x = 0.12), low threading-dislocation density (~1 × 10⁹ cm⁻²), uniform composition in both growth and lateral directions, and a narrow emission band.

Abstract

500-nm-thick InxGa1−xN layers with x = 0.05–0.14 were grown by plasma-assisted molecular beam epitaxy on commercial GaN(0001) templates. The layers were characterized by XRD, AFM, CL, SIMS, TEM, and room-temperature PL. The paper reports low strain relaxation (10% for x = 0.12), low threading-dislocation density (~1 × 10⁹ cm⁻²), uniform composition in both growth and lateral directions, and a narrow emission band.