Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | nonresonant illumination center energy | 1.49eV | — | |||
| Formation Energy Ev | biexciton binding energy | 0.00022eV | — | |||
| Raman Mode Separation | fine-structure splitting | 57µeV | — | |||
| Fet Threshold Voltage | dephasing time T₂ | 240ps | — | |||
| Fet Threshold Voltage | exciton radiative rate gammaX | 1.4ns⁻¹ | — | |||
| Fet Threshold Voltage | biexciton radiative rate gammaB | 4.4ns⁻¹ | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | nonresonant illumination center energy | 1.49eV | — | |||
| Formation Energy Ev | biexciton binding energy | 0.00022eV | — | |||
| Raman Mode Separation | fine-structure splitting | 57µeV | — | |||
| Fet Threshold Voltage | dephasing time T₂ | 240ps | — | |||
| Fet Threshold Voltage | exciton radiative rate gammaX | 1.4ns⁻¹ | — | |||
| Fet Threshold Voltage | biexciton radiative rate gammaB | 4.4ns⁻¹ | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | nonresonant illumination center energy | 1.49eV | — | |||
| Formation Energy Ev | biexciton binding energy | 0.00022eV | — | |||
| Raman Mode Separation | fine-structure splitting | 57µeV | — | |||
| Fet Threshold Voltage | dephasing time T₂ | 240ps | — | |||
| Fet Threshold Voltage | exciton radiative rate gammaX | 1.4ns⁻¹ | — | |||
| Fet Threshold Voltage | biexciton radiative rate gammaB | 4.4ns⁻¹ | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | nonresonant illumination center energy | 1.49eV | — | |||
| Formation Energy Ev | biexciton binding energy | 0.00022eV | — | |||
| Raman Mode Separation | fine-structure splitting | 57µeV | — | |||
| Fet Threshold Voltage | dephasing time T₂ | 240ps | — | |||
| Fet Threshold Voltage | exciton radiative rate gammaX | 1.4ns⁻¹ | — | |||
| Fet Threshold Voltage | biexciton radiative rate gammaB | 4.4ns⁻¹ | — |
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