Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Analytical model of a highly oblate ellipsoidal InAs nanocluster embedded in a GaAs matrix, with finite-depth heterointerface and ellipsoidal geometry.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Analytical model of a highly oblate ellipsoidal InAs nanocluster embedded in a GaAs matrix, with finite-depth heterointerface and ellipsoidal geometry.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Analytical model of a highly oblate ellipsoidal InAs nanocluster embedded in a GaAs matrix, with finite-depth heterointerface and ellipsoidal geometry.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Analytical model of a highly oblate ellipsoidal InAs nanocluster embedded in a GaAs matrix, with finite-depth heterointerface and ellipsoidal geometry.
Exact analytical solution of the Schrödinger equation in ellipsoidal coordinates for a strongly oblate ellipsoidal quantum dot with finite-depth heterointerface; energy spectrum and optical-transition analysis.
Exact analytical solution of the Schrödinger equation in ellipsoidal coordinates for a strongly oblate ellipsoidal quantum dot with finite-depth heterointerface; energy spectrum and optical-transition analysis.
Exact analytical solution of the Schrödinger equation in ellipsoidal coordinates for a strongly oblate ellipsoidal quantum dot with finite-depth heterointerface; energy spectrum and optical-transition analysis.
Exact analytical solution of the Schrödinger equation in ellipsoidal coordinates for a strongly oblate ellipsoidal quantum dot with finite-depth heterointerface; energy spectrum and optical-transition analysis.
