High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Cornelius Nawrath; Raphael Joos; Sascha Kolatschek; Stephanie Bauer; Pascal Pruy; Florian Hornung; Julius Fischer; Jiasheng Huang; Ponraj Vijayan; Robert Sittig; Michael Jetter; Simone Luca Portalupi; Peter Michler

doi:10.48550/arxiv.2207.12898

Paper details

Research paper

Experimental CharacterizationOther Computational

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Cornelius Nawrath, Raphael Joos, Sascha Kolatschek, Stephanie Bauer et al.

2022·10.48550/arxiv.2207.12898·arXiv:2207.12898

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

4 characterizations16 properties9 figures

ExperimentalInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / Dielectriccircular Bragg gratingStudied Material

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

1 characterization2 properties1 figure

InAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / Dielectric

Materials

InAs quantum dot

InAs

Studied Material

Also known as

QDQD₁reference QD

Variables

emitter_type= quantum dot

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	QD₁ decay time	0.52ns	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	reference QD decay time	1.59ns	InAs	Reference quantum dot region on the same sample outside the		—
Fet Carrier Concentration	Purcell factor	3	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0052	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0072	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0113	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	4.77MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	13.88MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	2.96MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0432	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	cavity mode FWHM	9.74nm	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	polarization mode splitting	1.24nm	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	QD₁ decay time	0.52ns	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	reference QD decay time	1.59ns	InAs	Reference quantum dot region on the same sample outside the		—
Fet Carrier Concentration	maximum Purcell factor	16.6	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	collection efficiency	85%	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	maximum collection efficiency	92%	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	13.9MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
PL Peak	regex-detected PL peak	1550nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	QD₁ decay time	0.52ns	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	reference QD decay time	1.59ns	InAs	Reference quantum dot region on the same sample outside the		—
Fet Carrier Concentration	Purcell factor	3	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0052	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0072	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0113	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	4.77MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	13.88MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	2.96MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0432	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	cavity mode FWHM	9.74nm	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	polarization mode splitting	1.24nm	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	QD₁ decay time	0.52ns	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	reference QD decay time	1.59ns	InAs	Reference quantum dot region on the same sample outside the		—
Fet Carrier Concentration	maximum Purcell factor	16.6	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	collection efficiency	85%	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	maximum collection efficiency	92%	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	13.9MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
PL Peak	regex-detected PL peak	1550nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	QD₁ decay time	0.52ns	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	reference QD decay time	1.59ns	InAs	Reference quantum dot region on the same sample outside the		—
Fet Carrier Concentration	Purcell factor	3	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0052	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0072	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0113	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	4.77MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	13.88MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	2.96MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0432	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	cavity mode FWHM	9.74nm	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	polarization mode splitting	1.24nm	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	QD₁ decay time	0.52ns	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	reference QD decay time	1.59ns	InAs	Reference quantum dot region on the same sample outside the		—
Fet Carrier Concentration	maximum Purcell factor	16.6	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	collection efficiency	85%	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	maximum collection efficiency	92%	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	13.9MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
PL Peak	regex-detected PL peak	1550nm	—	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Fet Carrier Concentration	QD₁ decay time	0.52ns	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	reference QD decay time	1.59ns	InAs	Reference quantum dot region on the same sample outside the		—
Fet Carrier Concentration	Purcell factor	3	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0052	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0072	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0113	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	4.77MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	13.88MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	2.96MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	g(2)(0)	0.0432	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	cavity mode FWHM	9.74nm	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	polarization mode splitting	1.24nm	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	QD₁ decay time	0.52ns	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	reference QD decay time	1.59ns	InAs	Reference quantum dot region on the same sample outside the		—
Fet Carrier Concentration	maximum Purcell factor	16.6	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	collection efficiency	85%	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	maximum collection efficiency	92%	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
Fet Carrier Concentration	fiber-coupled single-photon count rate	13.9MHz	InAs	Device containing an InAs/InGaAs/GaAs quantum dot coupled to		—
PL Peak	regex-detected PL peak	1550nm	—	—	—	—

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Samples

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

Materials

Why these are connected

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Samples

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

Materials

Why these are connected

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Samples

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

Materials

Why these are connected

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Samples

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

Materials

Why these are connected

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Samples

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

Materials

Why these are connected

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Samples

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

Materials

Why these are connected

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Samples

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

Materials

Why these are connected

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Samples

Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.

Reference quantum dot region on the same sample outside the circular Bragg grating structure.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations