Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InAs epitaxial layer thickness | 100nm | — | — | ||
| Carrier Concentration | n3D | (2.53 ± 0.02) × 10^18cm⁻³ | — | |||
| Fet Threshold Voltage | critical temperature Tc | 1.2K | — | |||
| Fet Threshold Voltage | critical temperature Tc | 1.2K | — | |||
| Fet Threshold Voltage | NET | 100µK | — | |||
| Fet Threshold Voltage | NET | 200µK | — | |||
| Fet Threshold Voltage | Thouless energy Eth1 | 4.7e-24J | — | |||
| Fet Threshold Voltage | Thouless energy Eth2 | 3.5e-24J | — | |||
| Fet Threshold Voltage | effective junction length L₁ | 1.43um | — | |||
| Fet Threshold Voltage | effective junction length L₂ | 1.71um | — | |||
| Fet Threshold Voltage | nominal Josephson junction separation | ~550nm | — | |||
| Fet Threshold Voltage | nominal Josephson junction separation | ~550nm | — | |||
| Fet Mobility | Noise Equivalent Temperature | 100-200µK | — | |||
| Fet Mobility | Noise Equivalent Temperature | 100-200µK | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InAs epitaxial layer thickness | 100nm | — | — | ||
| Carrier Concentration | n3D | (2.53 ± 0.02) × 10^18cm⁻³ | — | |||
| Fet Threshold Voltage | critical temperature Tc | 1.2K | — | |||
| Fet Threshold Voltage | critical temperature Tc | 1.2K | — | |||
| Fet Threshold Voltage | NET | 100µK | — | |||
| Fet Threshold Voltage | NET | 200µK | — | |||
| Fet Threshold Voltage | Thouless energy Eth1 | 4.7e-24J | — | |||
| Fet Threshold Voltage | Thouless energy Eth2 | 3.5e-24J | — | |||
| Fet Threshold Voltage | effective junction length L₁ | 1.43um | — | |||
| Fet Threshold Voltage | effective junction length L₂ | 1.71um | — | |||
| Fet Threshold Voltage | nominal Josephson junction separation | ~550nm | — | |||
| Fet Threshold Voltage | nominal Josephson junction separation | ~550nm | — | |||
| Fet Mobility | Noise Equivalent Temperature | 100-200µK | — | |||
| Fet Mobility | Noise Equivalent Temperature | 100-200µK | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InAs epitaxial layer thickness | 100nm | — | — | ||
| Carrier Concentration | n3D | (2.53 ± 0.02) × 10^18cm⁻³ | — | |||
| Fet Threshold Voltage | critical temperature Tc | 1.2K | — | |||
| Fet Threshold Voltage | critical temperature Tc | 1.2K | — | |||
| Fet Threshold Voltage | NET | 100µK | — | |||
| Fet Threshold Voltage | NET | 200µK | — | |||
| Fet Threshold Voltage | Thouless energy Eth1 | 4.7e-24J | — | |||
| Fet Threshold Voltage | Thouless energy Eth2 | 3.5e-24J | — | |||
| Fet Threshold Voltage | effective junction length L₁ | 1.43um | — | |||
| Fet Threshold Voltage | effective junction length L₂ | 1.71um | — | |||
| Fet Threshold Voltage | nominal Josephson junction separation | ~550nm | — | |||
| Fet Threshold Voltage | nominal Josephson junction separation | ~550nm | — | |||
| Fet Mobility | Noise Equivalent Temperature | 100-200µK | — | |||
| Fet Mobility | Noise Equivalent Temperature | 100-200µK | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | InAs epitaxial layer thickness | 100nm | — | — | ||
| Carrier Concentration | n3D | (2.53 ± 0.02) × 10^18cm⁻³ | — | |||
| Fet Threshold Voltage | critical temperature Tc | 1.2K | — | |||
| Fet Threshold Voltage | critical temperature Tc | 1.2K | — | |||
| Fet Threshold Voltage | NET | 100µK | — | |||
| Fet Threshold Voltage | NET | 200µK | — | |||
| Fet Threshold Voltage | Thouless energy Eth1 | 4.7e-24J | — | |||
| Fet Threshold Voltage | Thouless energy Eth2 | 3.5e-24J | — | |||
| Fet Threshold Voltage | effective junction length L₁ | 1.43um | — | |||
| Fet Threshold Voltage | effective junction length L₂ | 1.71um | — | |||
| Fet Threshold Voltage | nominal Josephson junction separation | ~550nm | — | |||
| Fet Threshold Voltage | nominal Josephson junction separation | ~550nm | — | |||
| Fet Mobility | Noise Equivalent Temperature | 100-200µK | — | |||
| Fet Mobility | Noise Equivalent Temperature | 100-200µK | — |