Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
1 characterization3 properties1 figure
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | maximum data rate | 3.8Gbps | — | |||
| Fet On Off Ratio | power conversion efficiency | 39.7% | — | |||
| Fet On Off Ratio | incident optical power | 2.3mW | — | |||
| Optical Band Gap | band gap | 1.42eV | — | — | — |
Related documents with shared materials, methods, properties, or citations.
The role of small-angle electron-electron scattering in transverse magnetic focusing experiment
Phosphides-based terahertz quantum-cascade laser
Entropic signatures of the single-impurity Kondo state
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
GAAS CRYSTAL
Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit
Nondestructive KPFM-assisted Quality Control in Fabrication of GaAs High-Speed Electronics
Terahertz frequency upconversion by coherently driving charge dynamics in the InSb/CdTe heterostructure
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
Generation of a single-cycle surface acoustic wave pulse on LiNbO3 for application to thin film materials
Extremely weak sub-kelvin electron-phonon coupling in InAs on insulator
MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
1 characterization3 properties1 figure
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | maximum data rate | 3.8Gbps | — | |||
| Fet On Off Ratio | power conversion efficiency | 39.7% | — | |||
| Fet On Off Ratio | incident optical power | 2.3mW | — | |||
| Optical Band Gap | band gap | 1.42eV | — | — | — |
Related documents with shared materials, methods, properties, or citations.
The role of small-angle electron-electron scattering in transverse magnetic focusing experiment
Phosphides-based terahertz quantum-cascade laser
Entropic signatures of the single-impurity Kondo state
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
GAAS CRYSTAL
Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit
Nondestructive KPFM-assisted Quality Control in Fabrication of GaAs High-Speed Electronics
Terahertz frequency upconversion by coherently driving charge dynamics in the InSb/CdTe heterostructure
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
Generation of a single-cycle surface acoustic wave pulse on LiNbO3 for application to thin film materials
Extremely weak sub-kelvin electron-phonon coupling in InAs on insulator
MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
1 characterization3 properties1 figure
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | maximum data rate | 3.8Gbps | — | |||
| Fet On Off Ratio | power conversion efficiency | 39.7% | — | |||
| Fet On Off Ratio | incident optical power | 2.3mW | — | |||
| Optical Band Gap | band gap | 1.42eV | — | — | — |
Related documents with shared materials, methods, properties, or citations.
The role of small-angle electron-electron scattering in transverse magnetic focusing experiment
Phosphides-based terahertz quantum-cascade laser
Entropic signatures of the single-impurity Kondo state
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
GAAS CRYSTAL
Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit
Nondestructive KPFM-assisted Quality Control in Fabrication of GaAs High-Speed Electronics
Terahertz frequency upconversion by coherently driving charge dynamics in the InSb/CdTe heterostructure
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
Generation of a single-cycle surface acoustic wave pulse on LiNbO3 for application to thin film materials
Extremely weak sub-kelvin electron-phonon coupling in InAs on insulator
MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
No measurements recorded
1 characterization3 properties1 figure
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | maximum data rate | 3.8Gbps | — | |||
| Fet On Off Ratio | power conversion efficiency | 39.7% | — | |||
| Fet On Off Ratio | incident optical power | 2.3mW | — | |||
| Optical Band Gap | band gap | 1.42eV | — | — | — |
Related documents with shared materials, methods, properties, or citations.
The role of small-angle electron-electron scattering in transverse magnetic focusing experiment
Phosphides-based terahertz quantum-cascade laser
Entropic signatures of the single-impurity Kondo state
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
GAAS CRYSTAL
Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit
Nondestructive KPFM-assisted Quality Control in Fabrication of GaAs High-Speed Electronics
Terahertz frequency upconversion by coherently driving charge dynamics in the InSb/CdTe heterostructure
Development of Nb-GaAs based superconductor semiconductor hybrid platform by combining in-situ dc magnetron sputtering and molecular beam epitaxy
Generation of a single-cycle surface acoustic wave pulse on LiNbO3 for application to thin film materials
Extremely weak sub-kelvin electron-phonon coupling in InAs on insulator
MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration