Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

P. T. Madathil; C. Wang; S. K. Singh; A. Gupta; K. A. Villegas Rosales; Y. J. Chung; K. W. West; K. W. Baldwin; L. N. Pfeiffer; L. W. Engel; M. Shayegan

doi:10.1103/PhysRevLett.132.096502

Paper

Atlas literature

Research paper

Experimental Characterization

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

P. T. Madathil, C. Wang, S. K. Singh, A. Gupta et al.

2024·10.1103/PhysRevLett.132.096502·arXiv:2403.07662

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

1 characterization3 properties3 figures

Experimentaltwo-dimensional electron systemStudied MaterialGaAsSubstrate / DielectricAlxGa₁-xAsSubstrate / DielectricSiSubstrate / DielectricInSnCapping Or Contact

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

1 characterization2 properties3 figures

Experimentaltwo-dimensional electron systemStudied MaterialGaAsSubstrate / DielectricAlxGa₁-xAsSubstrate / DielectricSiSubstrate / DielectricInSnCapping Or Contact

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

1 characterization2 properties3 figures

Experimentaltwo-dimensional electron systemStudied MaterialGaAsSubstrate / DielectricAlxGa₁-xAsSubstrate / DielectricSiSubstrate / DielectricInSnCapping Or Contact

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

1 characterization3 properties3 figures

Experimentaltwo-dimensional electron systemStudied MaterialGaAsSubstrate / DielectricAlxGa₁-xAsSubstrate / DielectricSiSubstrate / DielectricInSnCapping Or Contact

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit | Matter42 Literature

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Samples

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Samples

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Samples

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Samples

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Samples

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Samples

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Samples

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit

Samples

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 2.8 × 10¹⁰ cm⁻²; well width 89 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 4.4 × 10¹⁰ cm⁻²; well width 70 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 7.0 × 10¹⁰ cm⁻²; well width 58 nm.

Ultra-pure 2DES confined to a GaAs quantum well with stepped AlxGa1−xAs barriers, Si dopants in a doping-well structure, and alloyed In:Sn contacts. Density n = 10 × 10¹⁰ cm⁻²; well width 50 nm.

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