Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Semiconductor microcavity grown by MBE on a GaAs substrate, comprising GaAs/AlAs DBRs and a single In0.06Ga0.94As quantum well; subsequently patterned into a staggered square photonic lattice of micrometer-scale mesas.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Semiconductor microcavity grown by MBE on a GaAs substrate, comprising GaAs/AlAs DBRs and a single In0.06Ga0.94As quantum well; subsequently patterned into a staggered square photonic lattice of micrometer-scale mesas.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Semiconductor microcavity grown by MBE on a GaAs substrate, comprising GaAs/AlAs DBRs and a single In0.06Ga0.94As quantum well; subsequently patterned into a staggered square photonic lattice of micrometer-scale mesas.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Semiconductor microcavity grown by MBE on a GaAs substrate, comprising GaAs/AlAs DBRs and a single In0.06Ga0.94As quantum well; subsequently patterned into a staggered square photonic lattice of micrometer-scale mesas.
