Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Farah Basarić; Vladan Brajović; Gerrit Behner; Kristof Moors; William Schaarman; Andrei Manolescu; Raghavendra Juluri; Ana M. Sanchez; Jin Hee Bae; Hans Lüth; Detlev Grützmacher; Alexander Pawlis; Thomas Schäpers

doi:10.48550/arXiv.2402.13880

Paper details

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Farah Basarić, Vladan Brajović, Gerrit Behner, Kristof Moors et al.

arXiv preprint·2025·10.48550/arXiv.2402.13880·arXiv:2503.06789

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

4 preparations2 characterizations9 properties2 figures

ExperimentalGaAsStudied MaterialInAsStudied Material

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

4 preparations2 characterizations7 properties2 figures

ExperimentalGaAsStudied MaterialInAsStudied Material

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

4 preparations2 characterizations7 properties2 figures

ExperimentalGaAsStudied MaterialInAsStudied Material

Materials

GaAs

Studied Material

Variables

part= core

studied material

InAs

Studied Material

Variables

part

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	SiO₂ thickness	150nm	SiO₂	Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Substrate Thickness	SiO₂ thickness	20nm	SiO₂	Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	51nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	28nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	79nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	400nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	3.3um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	58nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	27nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	85nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	400nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	2.7um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	56nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	39nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	95nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	450nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	4.6um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Magnetoconductance Oscillation Period	h/e AB period	0.4T	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Effective Enclosed Radius	radius inferred from AB period	56nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	SiO₂ thickness	150nm	SiO₂	Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Substrate Thickness	SiO₂ thickness	20nm	SiO₂	Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	51nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	28nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	79nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	400nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	3.3um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	58nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	27nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	85nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	400nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	2.7um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	56nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	39nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	95nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	450nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	4.6um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Magnetoconductance Oscillation Period	h/e AB period	0.4T	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Effective Enclosed Radius	radius inferred from AB period	56nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	SiO₂ thickness	150nm	SiO₂	Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Substrate Thickness	SiO₂ thickness	20nm	SiO₂	Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	51nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	28nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	79nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	400nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	3.3um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	58nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	27nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	85nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	400nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	2.7um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	56nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	39nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	95nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	450nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	4.6um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Magnetoconductance Oscillation Period	h/e AB period	0.4T	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Effective Enclosed Radius	radius inferred from AB period	56nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	SiO₂ thickness	150nm	SiO₂	Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Substrate Thickness	SiO₂ thickness	20nm	SiO₂	Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	51nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	28nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	79nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	400nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	3.3um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	58nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	27nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	85nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	400nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	2.7um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Core Radius	core radius	56nm	GaAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Shell Thickness	shell thickness	39nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Nanowire Total Radius	total radius	95nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Inner Contact Separation	Lc	450nm	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Phase Coherence Length	lphi	4.6um	GaAs InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Magnetoconductance Oscillation Period	h/e AB period	0.4T	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—
Effective Enclosed Radius	radius inferred from AB period	56nm	InAs	Phase-pure zincblende GaAs/InAs core/shell nanowire device f	—

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Samples

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

Materials

Why these are connected

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Samples

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

Materials

Why these are connected

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Samples

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

Materials

Why these are connected

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Samples

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

Materials

Why these are connected

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Samples

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

Materials

Why these are connected

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Samples

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

Materials

Why these are connected

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Samples

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

Materials

Why these are connected

Aharonov–Bohm and Altshuler–Aronov–Spivak oscillations in the quasi-ballistic regime in phase-pure GaAs/InAs core/shell nanowires

Samples

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample A).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 1 (sample B).

Phase-pure zincblende GaAs/InAs core/shell nanowire device from growth run 2 (sample C).

Materials

Why these are connected

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization

Properties

Simulations

Growth

Processing

Characterization

Properties

Simulations