Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani; Abel John; Satish Shetty; Miriam Giparakis; Kanika Arora; Avidesh Maharaj; Gottfried Strasser; Aaron Maxwell Andrews; Helmut Koeck; Alan Mantooth; Gregory Salamo; Debbie G Senesky

doi:10.48550/arxiv.2402.11393

Research paper

Experimental GrowthExperimental Characterization

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis et al.

2024·10.48550/arxiv.2402.11393·arXiv:2402.11393

Research paper

Experimental GrowthExperimental Characterization

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis et al.

2024·10.48550/arxiv.2402.11393·arXiv:2402.11393

Research paper

Experimental GrowthExperimental Characterization

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis et al.

2024·10.48550/arxiv.2402.11393·arXiv:2402.11393

Research paper

Experimental GrowthExperimental Characterization

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis et al.

2024·10.48550/arxiv.2402.11393·arXiv:2402.11393

Research paper

Experimental GrowthExperimental Characterization

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis et al.

2024·10.48550/arxiv.2402.11393·arXiv:2402.11393

Research paper

Experimental GrowthExperimental Characterization

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis et al.

2024·10.48550/arxiv.2402.11393·arXiv:2402.11393

Research paper

Experimental GrowthExperimental Characterization

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis et al.

2024·10.48550/arxiv.2402.11393·arXiv:2402.11393

Research paper

Experimental GrowthExperimental Characterization

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Anand V Lalwani, Abel John, Satish Shetty, Miriam Giparakis et al.

2024·10.48550/arxiv.2402.11393·arXiv:2402.11393

GaAs/AlGaAs 2DEG Hall-effect sensor heterostructure fabricated by MBE on an undoped GaAs substrate.

1 preparation

ExperimentalGaAsStudied MaterialAlxGa₁-xAsStudied MaterialGaAsSubstrate / Dielectric

AlGaN/GaN 2DEG Hall-effect sensor heterostructure grown by plasma-assisted MBE on a sapphire substrate with an HVPE-grown GaN template.

2 preparations1 characterization1 property3 figures

ExperimentalAlxGa₁-xNStudied MaterialGaNStudied MaterialAl₂O₃Substrate / DielectricGaNSubstrate / Dielectric

Processed AlGaN/GaN Hall-effect sensor device with etched Hall geometry, Ti/Al/Ni/Au ohmic contacts, and RTA-treated contacts; used for Hall and contact-resistance characterization.

3 preparations1 characterization1 property3 figures

ExperimentalAlxGa₁-xNStudied MaterialGaNStudied MaterialAl₂O₃Substrate / DielectricGaNSubstrate / DielectricTiCapping Or ContactAlCapping Or ContactNiCapping Or ContactAuCapping Or Contact

GaAs/AlGaAs 2DEG Hall-effect sensor heterostructure fabricated by MBE on an undoped GaAs substrate.

1 preparation

ExperimentalGaAsStudied MaterialAlxGa₁-xAsStudied MaterialGaAsSubstrate / Dielectric

AlGaN/GaN 2DEG Hall-effect sensor heterostructure grown by plasma-assisted MBE on a sapphire substrate with an HVPE-grown GaN template.

2 preparations1 characterization1 property3 figures

ExperimentalAlxGa₁-xNStudied MaterialGaNStudied MaterialAl₂O₃Substrate / DielectricGaNSubstrate / Dielectric

Processed AlGaN/GaN Hall-effect sensor device with etched Hall geometry, Ti/Al/Ni/Au ohmic contacts, and RTA-treated contacts; used for Hall and contact-resistance characterization.

3 preparations1 characterization1 property3 figures

ExperimentalAlxGa₁-xNStudied MaterialGaNStudied MaterialAl₂O₃Substrate / DielectricGaNSubstrate / DielectricTiCapping Or ContactAlCapping Or ContactNiCapping Or ContactAuCapping Or Contact

GaAs/AlGaAs 2DEG Hall-effect sensor heterostructure fabricated by MBE on an undoped GaAs substrate.

1 preparation

ExperimentalGaAsStudied MaterialAlxGa₁-xAsStudied MaterialGaAsSubstrate / Dielectric

AlGaN/GaN 2DEG Hall-effect sensor heterostructure grown by plasma-assisted MBE on a sapphire substrate with an HVPE-grown GaN template.

2 preparations1 characterization1 property3 figures

ExperimentalAlxGa₁-xNStudied MaterialGaNStudied MaterialAl₂O₃Substrate / DielectricGaNSubstrate / Dielectric

Processed AlGaN/GaN Hall-effect sensor device with etched Hall geometry, Ti/Al/Ni/Au ohmic contacts, and RTA-treated contacts; used for Hall and contact-resistance characterization.

3 preparations1 characterization1 property3 figures

ExperimentalAlxGa₁-xNStudied MaterialGaNStudied MaterialAl₂O₃Substrate / DielectricGaNSubstrate / DielectricTiCapping Or ContactAlCapping Or ContactNiCapping Or ContactAuCapping Or Contact

GaAs/AlGaAs 2DEG Hall-effect sensor heterostructure fabricated by MBE on an undoped GaAs substrate.

1 preparation

ExperimentalGaAsStudied MaterialAlxGa₁-xAsStudied MaterialGaAsSubstrate / Dielectric

AlGaN/GaN 2DEG Hall-effect sensor heterostructure grown by plasma-assisted MBE on a sapphire substrate with an HVPE-grown GaN template.

2 preparations1 characterization1 property3 figures

ExperimentalAlxGa₁-xNStudied MaterialGaNStudied MaterialAl₂O₃Substrate / DielectricGaNSubstrate / Dielectric

Processed AlGaN/GaN Hall-effect sensor device with etched Hall geometry, Ti/Al/Ni/Au ohmic contacts, and RTA-treated contacts; used for Hall and contact-resistance characterization.

3 preparations1 characterization1 property3 figures

ExperimentalAlxGa₁-xNStudied MaterialGaNStudied MaterialAl₂O₃Substrate / DielectricGaNSubstrate / DielectricTiCapping Or ContactAlCapping Or ContactNiCapping Or ContactAuCapping Or Contact

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors

Samples

GaAs/AlGaAs 2DEG Hall-effect sensor heterostructure fabricated by MBE on an undoped GaAs substrate.

AlGaN/GaN 2DEG Hall-effect sensor heterostructure grown by plasma-assisted MBE on a sapphire substrate with an HVPE-grown GaN template.

Processed AlGaN/GaN Hall-effect sensor device with etched Hall geometry, Ti/Al/Ni/Au ohmic contacts, and RTA-treated contacts; used for Hall and contact-resistance characterization.

Why these are connected

Samples

GaAs/AlGaAs 2DEG Hall-effect sensor heterostructure fabricated by MBE on an undoped GaAs substrate.

AlGaN/GaN 2DEG Hall-effect sensor heterostructure grown by plasma-assisted MBE on a sapphire substrate with an HVPE-grown GaN template.

Processed AlGaN/GaN Hall-effect sensor device with etched Hall geometry, Ti/Al/Ni/Au ohmic contacts, and RTA-treated contacts; used for Hall and contact-resistance characterization.

Why these are connected

Samples

GaAs/AlGaAs 2DEG Hall-effect sensor heterostructure fabricated by MBE on an undoped GaAs substrate.

AlGaN/GaN 2DEG Hall-effect sensor heterostructure grown by plasma-assisted MBE on a sapphire substrate with an HVPE-grown GaN template.

Processed AlGaN/GaN Hall-effect sensor device with etched Hall geometry, Ti/Al/Ni/Au ohmic contacts, and RTA-treated contacts; used for Hall and contact-resistance characterization.

Why these are connected

Samples

GaAs/AlGaAs 2DEG Hall-effect sensor heterostructure fabricated by MBE on an undoped GaAs substrate.

AlGaN/GaN 2DEG Hall-effect sensor heterostructure grown by plasma-assisted MBE on a sapphire substrate with an HVPE-grown GaN template.

Processed AlGaN/GaN Hall-effect sensor device with etched Hall geometry, Ti/Al/Ni/Au ohmic contacts, and RTA-treated contacts; used for Hall and contact-resistance characterization.

Why these are connected