DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME

Masaki FUJIKANE

Patent

Atlas literature

Patent

DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME

Masaki FUJIKANE

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

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FIG. 21

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

2 independent · 6 dependent

1
IndependentGaNwater vapor collecting device with GaN semiconductor substrate
A device comprising: a semiconductor substrate that contains gallium nitride and has a crystal face inclined from 0.05 0 to 15 0 inclusive with respect to a c-plane, wherein: the semiconductor substrate includes an irregular portion on the crystal face, and a contact angle of pure water having a speciﬁc resistance of 18 M n- cm or more on a surface of the irregular portion is 10 or less.
1. 2
  Dependent← claim 1GaNwater vapor collecting device with GaN semiconductor substrate
  The device according to claim 1, wherein a mean width of roughness proﬁle elements of the crystal face is from 0.8 m to 1,000 m inclusive.
2. 3
  Dependent← claim 1GaNwater vapor collecting device with GaN semiconductor substrate
  The device according to claim 1, wherein the crystal face has an arithmetic mean roughness of from 10 nm to 800 nm inclusive.
3. 4
  Dependent← claim 1GaNwater vapor collecting device with GaN semiconductor substrate
  The device according to claim 1, wherein the crystal face is inclined 0.4 0 with respect to the c-plane.
4. 5
  Dependent← claim 1GaNwater vapor collecting device with GaN semiconductor substrate
  The device according to claim 1, wherein the semiconductor substrate is a GaN substrate.
5. 7
  Dependent← claim 1GaNwater vapor collecting device with GaN semiconductor substrate
  The device according to claim 1, wherein the pure water has a total organic carbon value of ppb or less.
6
IndependentGaNwater vapor collecting device with GaN semiconductor substrate
A device comprising: a semiconductor substrate containing gallium nitride and having a crystal face inclined with respect to a c-plane, wherein: the semiconductor substrate has an irregular portion on the crystal face, a contact angle of pure water having a speciﬁc resistance of 18 M n-cm or more on a surface of the irregular portion is 10 or less, and the surface has a characteristic that, when a pure water droplet with a volume of 10 L is dropped onto the surface and then the surface is inclined at least 15 0 with respect to a horizontal plane, the water droplet slides down the surface.
1. 8
  Dependent← claim 6GaNwater vapor collecting device with GaN semiconductor substrate
  The device according to claim 6, wherein the pure water has a total organic carbon value of ppb or less.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

water vapor collecting device with GaN semiconductor substrate

GaNsemiconductor substrate with irregular crystal face

Materials

Materials described outside the worked examples.

gallium nitride-containing semiconductor

GaN

Semiconductor Substrate

AlxGayInzN semiconductor

AlxGayInzN

GaN-Based Semiconductor Crystal

gallium oxide

Process steps

Additional fabrication and treatment steps described in the patent.

Dry Etching

Step 1

Process details

description:Dry etching of at least part of the crystal face to form an irregular portion

Materials:GaN

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
contact angle of pure water (specific resistance ≥18 MΩ·cm) on surface of irregular portion	≤ 10 degrees	GaN
mean width of roughness profile elements (RSm) of crystal face	0.8–1000 μm

Why these are connected

Related documents with shared materials, methods, properties, or citations.

DEVICE INCLUDING SEMICONDUCTOR SUBSTRATE CONTAINING GALLIUM NITRIDE AND METHOD FOR PRODUCING THE SAME | Matter42 Literature