Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations7 properties3 figures
3 preparations4 characterizations9 properties3 figures
Related documents with shared materials, methods, properties, or citations.
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Dislocation-Free InGaN Nanoscale Light-Emitting Diode Pixels on Single Crystal GaN Substrate
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations7 properties3 figures
3 preparations4 characterizations9 properties3 figures
Related documents with shared materials, methods, properties, or citations.
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Dislocation-Free InGaN Nanoscale Light-Emitting Diode Pixels on Single Crystal GaN Substrate
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations7 properties3 figures
3 preparations4 characterizations9 properties3 figures
Related documents with shared materials, methods, properties, or citations.
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Dislocation-Free InGaN Nanoscale Light-Emitting Diode Pixels on Single Crystal GaN Substrate
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations4 characterizations7 properties3 figures
3 preparations4 characterizations9 properties3 figures
Related documents with shared materials, methods, properties, or citations.
Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution
Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity
Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors
3 kV Monolithic Bidirectional GaN HEMT on Sapphire
Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates
TERAHERTZ GUNN OSCILLATOR USING GALLIUM NITRIDE
Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz
CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER
Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods
High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities
Dislocation-Free InGaN Nanoscale Light-Emitting Diode Pixels on Single Crystal GaN Substrate
