Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors

High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN

CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Epitaxial growth optimization, measurement and theoretical analysis of strain-compensated QCL grown on (511)A InP

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors

High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN

CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Epitaxial growth optimization, measurement and theoretical analysis of strain-compensated QCL grown on (511)A InP

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors

High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN

CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Epitaxial growth optimization, measurement and theoretical analysis of strain-compensated QCL grown on (511)A InP

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

Cryogenic temperature dependence and hysteresis of surface-trap-induced gate leakage in GaN high-electron-mobility transistors

High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN

CURRENT APERTURE VERTICAL ELECTRON TRANSISTORS WITH AMMONIA MOLECULAR BEAM EPITAXY GROWN P-TYPE GALLIUM NITRIDE AS A CURRENT BLOCKING LAYER

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)

Epitaxial growth optimization, measurement and theoretical analysis of strain-compensated QCL grown on (511)A InP

High-Performance Ferroelectric Field-Effect Transistors with Ultra-High Current and Carrier Densities

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels