Energy–time entanglement from a monolithically integrated quantum dot on silicon

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors

Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Excited-State Trions in a Quantum Well

Energy–time entanglement from a monolithically integrated quantum dot on silicon

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors

Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Excited-State Trions in a Quantum Well

Energy–time entanglement from a monolithically integrated quantum dot on silicon

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors

Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Excited-State Trions in a Quantum Well

Energy–time entanglement from a monolithically integrated quantum dot on silicon

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

Development and Performance Study of Vertical GaN α-Particle Detector with High Energy Resolution

Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors

Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors

Microwave Performance of all MOCVD-grown AlScN/GaN MIS-HEMTs on Semi-Insulating GaN Substrates

Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Excited-State Trions in a Quantum Well