Excited-State Trions in a Quantum Well

Sourabh Jain; Mikhail Glazov; Ashish Arora

doi:10.1103/8181-jzj5

Paper details

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Excited-State Trions in a Quantum Well

Sourabh Jain, Mikhail Glazov, Ashish Arora

2025·10.1103/8181-jzj5·arXiv:2505.06988

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

1 preparation2 characterizations8 properties3 figures

ExperimentalGaAsStudied MaterialAl0.3Ga0.7AsSubstrate / DielectricGaAsSubstrate / Dielectric

Materials

GaAs

Studied Material

Also known as

active GaAs layerquantum well layer

studied material

Al0.3Ga0.7As

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Excited-State Trions in a Quantum Well | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	quantum well width	4.2nm	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X1s	1630.8meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	T1s	1628.8meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X1s + e scattering state	1635meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X2s	1643.4meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	1s trion binding energy	2meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	2s trion binding energy extrapolated at zero field	approximately 0meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	critical field for bound T2s	> 1T	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	quantum well width	4.2nm	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X1s	1630.8meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	T1s	1628.8meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X1s + e scattering state	1635meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X2s	1643.4meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	1s trion binding energy	2meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	2s trion binding energy extrapolated at zero field	approximately 0meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	critical field for bound T2s	> 1T	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	quantum well width	4.2nm	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X1s	1630.8meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	T1s	1628.8meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X1s + e scattering state	1635meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X2s	1643.4meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	1s trion binding energy	2meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	2s trion binding energy extrapolated at zero field	approximately 0meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	critical field for bound T2s	> 1T	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	quantum well width	4.2nm	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X1s	1630.8meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	T1s	1628.8meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X1s + e scattering state	1635meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	X2s	1643.4meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	1s trion binding energy	2meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	2s trion binding energy extrapolated at zero field	approximately 0meV	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—
PL Peak	critical field for bound T2s	> 1T	GaAs	A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7	—

Excited-State Trions in a Quantum Well

Samples

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

Materials

Why these are connected

Excited-State Trions in a Quantum Well

Samples

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

Materials

Why these are connected

Excited-State Trions in a Quantum Well

Samples

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

Materials

Why these are connected

Excited-State Trions in a Quantum Well

Samples

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

Materials

Why these are connected

Excited-State Trions in a Quantum Well

Samples

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

Materials

Why these are connected

Excited-State Trions in a Quantum Well

Samples

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

Materials

Why these are connected

Excited-State Trions in a Quantum Well

Samples

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

Materials

Why these are connected

Excited-State Trions in a Quantum Well

Samples

A 4.2 nm wide doped GaAs single quantum well with Al0.3Ga0.7As barriers grown on a GaAs (001) substrate.

Materials

Why these are connected

Growth

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Growth

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Growth

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Growth

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