High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Imad Limame; Peter Ludewig; Ching-Wen Shih; Marcel Hohn; Chirag C. Palekar; Wolfgang Stolz; Stephan Reitzenstein

doi:10.48550/arxiv.2311.14849

Paper

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Experimental GrowthExperimental Characterization

High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications

Imad Limame, Peter Ludewig, Ching-Wen Shih, Marcel Hohn et al.

2003·10.48550/arxiv.2311.14849·arXiv:2311.14849

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Epitaxial InGaAs/GaAs quantum-dot heterostructure grown on exactly oriented Si(001) via a GaP buffer, defect-reducing III-V layers, a GaAs/AlGaAs DBR, wetting layer, and capped QDs.

3 preparations3 characterizations13 properties3 figures

ExperimentalGaPStudied MaterialGaAsStudied MaterialAl0.90Ga0.10AsStudied MaterialGaInPStudied MaterialIn0.33Ga0.67AsStudied MaterialIn0.33Ga0.67AsStudied MaterialSiSubstrate / DielectricSi:PStudied Material

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