Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Konstantinos Pantzas; Virginie Trinité; Angela Vasanelli; Carlo Sirtori; Grégoire Beaudoin; Isabelle Sagnes; Jean-Luc Reverchon; Gilles Patriarche

doi:10.48550/arXiv.2509.19951

Paper details

Research paper

Experimental GrowthExperimental CharacterizationBand Structure

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Konstantinos Pantzas, Virginie Trinité, Angela Vasanelli, Carlo Sirtori et al.

arXiv·2025·arXiv:2509.19951

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

2 preparations1 characterization2 figures

ExperimentalInGaAsStudied MaterialInAlAsStudied MaterialInPSubstrate / Dielectric

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

1 preparation

ExperimentalInGaAsStudied MaterialInAlAsStudied MaterialInPSubstrate / DielectricSiStudied Material

Materials

InGaAs

Studied Material

studied material

InAlAs

Studied Material

studied material

InP

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Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures | Matter42 Literature

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Samples

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

Materials

Why these are connected

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Samples

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

Materials

Why these are connected

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Samples

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

Materials

Why these are connected

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Samples

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

Materials

Why these are connected

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Samples

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

Materials

Why these are connected

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Samples

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

Materials

Why these are connected

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Samples

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

Materials

Why these are connected

Accurate prediction of optical transitions in epitaxial InGaAs/InAlAs asymmetric coupled quantum well structures

Samples

Sample A: an asymmetric coupled quantum-well structure grown on InP by MOVPE, consisting of two InGaAs wells (5.6 nm and 2.5 nm) separated by a 1.4 nm InAlAs barrier and surrounded by 25 nm InAlAs barriers; used for atomically resolved STEM/strain/composition analysis.

Sample B: a multi-pass absorption sample containing thirty repetitions of the ACQW structure; the 5.6 nm InGaAs well is n-doped with Si to a target concentration of 1.5 × 10¹⁸ cm⁻³ and the structure is grown on a semi-insulating InP substrate.

Materials

Why these are connected

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