Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations10 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | laser emission wavelength | 1020nm | — | |||
| Fet Threshold Voltage | threshold current | 5mA | — | |||
| Pl Peak Intensity | total emitted optical power | 1.75mW | — | |||
| Pl Peak Intensity | slope efficiency | 0.5W/A | — | |||
| PL Peak | laser linewidth | 46MHz | — | |||
| PL Peak | maximum operating temperature | 55°C | — | |||
| Pl Peak Intensity | continuous operation duration | 500h | — | |||
| Count | number of lasing devices | 300 | — | |||
| Count | InGaAs quantum wells | 3 | — | |||
| Composition Fraction | In content | 20% | — |
Related documents with shared materials, methods, properties, or citations.
Excited-State Trions in a Quantum Well
Energy–time entanglement from a monolithically integrated quantum dot on silicon
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)
Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations10 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | laser emission wavelength | 1020nm | — | |||
| Fet Threshold Voltage | threshold current | 5mA | — | |||
| Pl Peak Intensity | total emitted optical power | 1.75mW | — | |||
| Pl Peak Intensity | slope efficiency | 0.5W/A | — | |||
| PL Peak | laser linewidth | 46MHz | — | |||
| PL Peak | maximum operating temperature | 55°C | — | |||
| Pl Peak Intensity | continuous operation duration | 500h | — | |||
| Count | number of lasing devices | 300 | — | |||
| Count | InGaAs quantum wells | 3 | — | |||
| Composition Fraction | In content | 20% | — |
Related documents with shared materials, methods, properties, or citations.
Excited-State Trions in a Quantum Well
Energy–time entanglement from a monolithically integrated quantum dot on silicon
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)
Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations10 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | laser emission wavelength | 1020nm | — | |||
| Fet Threshold Voltage | threshold current | 5mA | — | |||
| Pl Peak Intensity | total emitted optical power | 1.75mW | — | |||
| Pl Peak Intensity | slope efficiency | 0.5W/A | — | |||
| PL Peak | laser linewidth | 46MHz | — | |||
| PL Peak | maximum operating temperature | 55°C | — | |||
| Pl Peak Intensity | continuous operation duration | 500h | — | |||
| Count | number of lasing devices | 300 | — | |||
| Count | InGaAs quantum wells | 3 | — | |||
| Composition Fraction | In content | 20% | — |
Related documents with shared materials, methods, properties, or citations.
Excited-State Trions in a Quantum Well
Energy–time entanglement from a monolithically integrated quantum dot on silicon
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)
Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations2 characterizations10 properties4 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| PL Peak | laser emission wavelength | 1020nm | — | |||
| Fet Threshold Voltage | threshold current | 5mA | — | |||
| Pl Peak Intensity | total emitted optical power | 1.75mW | — | |||
| Pl Peak Intensity | slope efficiency | 0.5W/A | — | |||
| PL Peak | laser linewidth | 46MHz | — | |||
| PL Peak | maximum operating temperature | 55°C | — | |||
| Pl Peak Intensity | continuous operation duration | 500h | — | |||
| Count | number of lasing devices | 300 | — | |||
| Count | InGaAs quantum wells | 3 | — | |||
| Composition Fraction | In content | 20% | — |
Related documents with shared materials, methods, properties, or citations.
Excited-State Trions in a Quantum Well
Energy–time entanglement from a monolithically integrated quantum dot on silicon
High-quality single InGaAs/GaAs quantum dot growth on a CMOS-compatible silicon substrate for quantum photonic applications
Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Impact of Surface Passivation on the Efficiency and High-speed Modulation of III–V GaAs/AlGaAs Nanopillar Array LEDs
EPITAXIAL GROWTH ON A GALLIUM ARSENIDE PHOSPHIDE CAPPED MATERIAL ON A GALLIUM ARSENIDE SUBSTRATE
Demonstration of room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001)
Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots
Circularly polarized cavity-mode emission from quantum dots in a semiconductor three-dimensional chiral photonic crystal
Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band
Direct Epitaxial Growth and Deterministic Device Integration of high-quality Telecom O-Band InGaAs Quantum Dots on Silicon Substrate
Broadband telecom single-photon emissions from InAs/InP quantum dots grown by MOVPE droplet epitaxy
