Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Maciej Matys; Atsushi Yamada; Toshihiro Ohki

doi:10.1002/pssr.202400379

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Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Maciej Matys, Atsushi Yamada, Toshihiro Ohki

2025·10.1002/pssr.202400379·arXiv:2409.12570

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

1 preparation6 characterizations3 properties6 figures

ExperimentalAlGaN/GaNStudied MaterialGaNStudied MaterialAlNStudied MaterialAl0.3Ga0.7NStudied MaterialAl0.4Ga0.6NStudied Material

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

1 preparation6 characterizations4 properties6 figures

ExperimentalAlGaN/GaNStudied MaterialGaNStudied MaterialAlNStudied MaterialAl0.3Ga0.7NStudied MaterialAl0.4Ga0.6NStudied Material

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

1 preparation6 characterizations3 properties6 figures

ExperimentalAlGaN/GaNStudied MaterialGaNStudied MaterialAlNStudied MaterialAl0.3Ga0.7NStudied MaterialAl0.4Ga0.6NStudied Material

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

1 preparation1 characterization2 properties1 figure

ExperimentalAlGaN/GaNStudied MaterialGaNStudied MaterialAlNStudied MaterialAl0.3Ga0.7NStudied MaterialAl0.4Ga0.6NStudied Material

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates | Matter42 Literature

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Samples

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Samples

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Samples

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Samples

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Samples

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Samples

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Samples

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

Samples

N-polar AlGaN/GaN heterostructure on sapphire with 0-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 4-period GaN/AlN superlattice back barrier.

N-polar AlGaN/GaN heterostructure on sapphire with 8-period GaN/AlN superlattice back barrier.

Control sample: 4-period GaN/AlN superlattice on GaN buffer with AlN barrier on sapphire, used for transport comparison.

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