A quantum coherent spin in a two-dimensional material at room temperature

Energy–time entanglement from a monolithically integrated quantum dot on silicon

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

Spin properties in droplet epitaxy-grown telecom quantum dots

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

A quantum coherent spin in a two-dimensional material at room temperature

Energy–time entanglement from a monolithically integrated quantum dot on silicon

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

Spin properties in droplet epitaxy-grown telecom quantum dots

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

A quantum coherent spin in a two-dimensional material at room temperature

Energy–time entanglement from a monolithically integrated quantum dot on silicon

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

Spin properties in droplet epitaxy-grown telecom quantum dots

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates

A quantum coherent spin in a two-dimensional material at room temperature

Energy–time entanglement from a monolithically integrated quantum dot on silicon

Controlled epitaxy of room-temperature quantum emitters in gallium nitride

Indium Gallium Nitride (inGaN) Relaxed Templates Employed as a Substrate for Nitride-Based Devices and Related Methods

Study on the efficiency droop in high-quality GaN material under high photoexcitation intensity

Xenon plasma-focused ion beam milling as a method to deterministically fabricate bright and high-purity single-photon sources operating at C-band

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

Spin properties in droplet epitaxy-grown telecom quantum dots

Record negative photoconductivity in N-polar AlGaN/GaN quantum-well heterostructures

Unusually high-density 2D electron gases in N-polar AlGaN/GaN heterostructures with GaN/AlN superlattice back barriers grown on sapphire substrates