NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz

Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films

Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same

GaN Substrate, Semiconductor Device and Method for Fabricating GaN Substrate and Semiconductor Device

Chemical Vapor Deposition of Nitrides by Carbon-free Brominated Precursors

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz

Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films

Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same

GaN Substrate, Semiconductor Device and Method for Fabricating GaN Substrate and Semiconductor Device

Chemical Vapor Deposition of Nitrides by Carbon-free Brominated Precursors

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz

Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films

Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same

GaN Substrate, Semiconductor Device and Method for Fabricating GaN Substrate and Semiconductor Device

Chemical Vapor Deposition of Nitrides by Carbon-free Brominated Precursors

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots

NON-POLAR GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION

Passivation-Free Ga-Polar AlGaN/GaN Recessed-Gate HEMTs on Sapphire with 2.8 W/mm POUT and 26.8% PAE at 94 GHz

Optimizing Metal-Organic Chemical Vapor Deposition for Ultrawide-Band-Gap MgSiN2 Thin Films

Method for Producing Gallium Nitride Layer and Seed Crystal Substrate Used in Same

GaN Substrate, Semiconductor Device and Method for Fabricating GaN Substrate and Semiconductor Device

Chemical Vapor Deposition of Nitrides by Carbon-free Brominated Precursors

Room-temperature Optically Detected Magnetic Resonance of Telecom Single Photon Emitters in GaN

3 kV Monolithic Bidirectional GaN HEMT on Sapphire

Low-voltage Ferroelectric Field-Effect Transistors with Ultrathin Aluminum Scandium Nitride and 2D channels

Stark Tuning and Charge State Control in Individual Telecom C-Band Quantum Dots