Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization10 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | critical current | 10uA | — | |||
| Fet Sheet Resistance | interface transparency | 0.8 | — | |||
| Fet Sheet Resistance | interface transparency | 0.3 | — | |||
| Fet Threshold Voltage | charge neutrality point shift | -3.6V | — | |||
| Fet Threshold Voltage | supercurrent persistence field | 2.4T | — | |||
| Fet Threshold Voltage | upper critical field Bc | 3.2T | — | |||
| Fet Threshold Voltage | cavity length Lc | 200nm | — | |||
| Fet Threshold Voltage | junction length L | 400nm | — | |||
| Fet Threshold Voltage | junction width W | 3um | — | |||
| Fet Threshold Voltage | Nb contact thickness | 60nm | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall Antidot as a Fractional Coulombmeter
Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions
Dirac excited state quenching in graphene
Universality in quantum critical flow of charge and heat in ultra-clean graphene
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Edge dependence of nonlocal transport in gapped bilayer graphene
Exploring room temperature spin transport under band gap opening in bilayer graphene
Electronic transport in BN-encapsulated graphene limited by remote phonon scattering
Spin injection and detection in all-van der Waals 2D devices
Unexpected large electrostatic gating by pyroelectric charge accumulation
Heavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Hall signal-dominated microwave transmission through graphene-loaded waveguides
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization10 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | critical current | 10uA | — | |||
| Fet Sheet Resistance | interface transparency | 0.8 | — | |||
| Fet Sheet Resistance | interface transparency | 0.3 | — | |||
| Fet Threshold Voltage | charge neutrality point shift | -3.6V | — | |||
| Fet Threshold Voltage | supercurrent persistence field | 2.4T | — | |||
| Fet Threshold Voltage | upper critical field Bc | 3.2T | — | |||
| Fet Threshold Voltage | cavity length Lc | 200nm | — | |||
| Fet Threshold Voltage | junction length L | 400nm | — | |||
| Fet Threshold Voltage | junction width W | 3um | — | |||
| Fet Threshold Voltage | Nb contact thickness | 60nm | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall Antidot as a Fractional Coulombmeter
Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions
Dirac excited state quenching in graphene
Universality in quantum critical flow of charge and heat in ultra-clean graphene
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Edge dependence of nonlocal transport in gapped bilayer graphene
Exploring room temperature spin transport under band gap opening in bilayer graphene
Electronic transport in BN-encapsulated graphene limited by remote phonon scattering
Spin injection and detection in all-van der Waals 2D devices
Unexpected large electrostatic gating by pyroelectric charge accumulation
Heavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Hall signal-dominated microwave transmission through graphene-loaded waveguides
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization10 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | critical current | 10uA | — | |||
| Fet Sheet Resistance | interface transparency | 0.8 | — | |||
| Fet Sheet Resistance | interface transparency | 0.3 | — | |||
| Fet Threshold Voltage | charge neutrality point shift | -3.6V | — | |||
| Fet Threshold Voltage | supercurrent persistence field | 2.4T | — | |||
| Fet Threshold Voltage | upper critical field Bc | 3.2T | — | |||
| Fet Threshold Voltage | cavity length Lc | 200nm | — | |||
| Fet Threshold Voltage | junction length L | 400nm | — | |||
| Fet Threshold Voltage | junction width W | 3um | — | |||
| Fet Threshold Voltage | Nb contact thickness | 60nm | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall Antidot as a Fractional Coulombmeter
Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions
Dirac excited state quenching in graphene
Universality in quantum critical flow of charge and heat in ultra-clean graphene
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Edge dependence of nonlocal transport in gapped bilayer graphene
Exploring room temperature spin transport under band gap opening in bilayer graphene
Electronic transport in BN-encapsulated graphene limited by remote phonon scattering
Spin injection and detection in all-van der Waals 2D devices
Unexpected large electrostatic gating by pyroelectric charge accumulation
Heavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Hall signal-dominated microwave transmission through graphene-loaded waveguides
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
3 preparations1 characterization10 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | critical current | 10uA | — | |||
| Fet Sheet Resistance | interface transparency | 0.8 | — | |||
| Fet Sheet Resistance | interface transparency | 0.3 | — | |||
| Fet Threshold Voltage | charge neutrality point shift | -3.6V | — | |||
| Fet Threshold Voltage | supercurrent persistence field | 2.4T | — | |||
| Fet Threshold Voltage | upper critical field Bc | 3.2T | — | |||
| Fet Threshold Voltage | cavity length Lc | 200nm | — | |||
| Fet Threshold Voltage | junction length L | 400nm | — | |||
| Fet Threshold Voltage | junction width W | 3um | — | |||
| Fet Threshold Voltage | Nb contact thickness | 60nm | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall Antidot as a Fractional Coulombmeter
Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions
Dirac excited state quenching in graphene
Universality in quantum critical flow of charge and heat in ultra-clean graphene
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Edge dependence of nonlocal transport in gapped bilayer graphene
Exploring room temperature spin transport under band gap opening in bilayer graphene
Electronic transport in BN-encapsulated graphene limited by remote phonon scattering
Spin injection and detection in all-van der Waals 2D devices
Unexpected large electrostatic gating by pyroelectric charge accumulation
Heavy Fermion Phase Diagram in Magic-angle Twisted Trilayer Graphene
Hall signal-dominated microwave transmission through graphene-loaded waveguides