Research paper
Experimental CharacterizationUniversality in quantum critical flow of charge and heat in ultra-clean graphene
Aniket Majumdar, Nisarg Chadha, Pritam Pal, Akash Gugnani et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | room-temperature mobility | 500000cm²/Vs | — | |||
| Fet Mobility | low-temperature mobility | 6000000cm²/Vs | — | |||
| Fet On Off Ratio | conductance enhancement over ballistic reference | 2 | — | |||
| Fet Threshold Voltage | Timp | 80K | — | |||
| Fet Sheet Resistance | quantum critical conductivity sigmaQ | (4 ± 1) × e2/h | — | |||
| Fet On Off Ratio | L₀/LWF | 300 | — | |||
| Fet On Off Ratio | etath/sth relative to holographic limit | 4 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | room-temperature mobility | 500000cm²/Vs | — | |||
| Fet Mobility | low-temperature mobility | 6000000cm²/Vs | — | |||
| Fet On Off Ratio | conductance enhancement over ballistic reference | 2 | — | |||
| Fet Threshold Voltage | Timp | 80K | — | |||
| Fet Sheet Resistance | quantum critical conductivity sigmaQ | (4 ± 1) × e2/h | — | |||
| Fet On Off Ratio | L₀/LWF | 300 | — | |||
| Fet On Off Ratio | etath/sth relative to holographic limit | 4 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | room-temperature mobility | 500000cm²/Vs | — | |||
| Fet Mobility | low-temperature mobility | 6000000cm²/Vs | — | |||
| Fet On Off Ratio | conductance enhancement over ballistic reference | 2 | — | |||
| Fet Threshold Voltage | Timp | 80K | — | |||
| Fet Sheet Resistance | quantum critical conductivity sigmaQ | (4 ± 1) × e2/h | — | |||
| Fet On Off Ratio | L₀/LWF | 300 | — | |||
| Fet On Off Ratio | etath/sth relative to holographic limit | 4 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | room-temperature mobility | 500000cm²/Vs | — | |||
| Fet Mobility | low-temperature mobility | 6000000cm²/Vs | — | |||
| Fet On Off Ratio | conductance enhancement over ballistic reference | 2 | — | |||
| Fet Threshold Voltage | Timp | 80K | — | |||
| Fet Sheet Resistance | quantum critical conductivity sigmaQ | (4 ± 1) × e2/h | — | |||
| Fet On Off Ratio | L₀/LWF | 300 | — | |||
| Fet On Off Ratio | etath/sth relative to holographic limit | 4 | — |