Research paperExperimental CharacterizationGraphene Magnetoresistance Control by Photoferroelectric SubstrateK. Maity, J.-F. Dayen, B. Doudin, R. Gumeniuk et al.ACS Nano·2025·10.1021/acsnano.3c07277·arXiv:2405.03663AbstractUltralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device-property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to magnetic dimensions and advance wireless operation for sensors and field-effect transistors.Read more
CVD-deposited graphene on PMN-PT30% photoferroelectric substrate used for Raman and magnetotransport measurements.1 characterization12 properties4 figuresExperimentalCStudied MaterialPMN-PTSubstrate / DielectricExpand
Bare PMN-PT30% substrate used for Raman comparison and ferroelectric characterization.1 characterization1 property1 figureReferencePMN-PTSubstrate / DielectricExpand
Bare Si/SiO₂(300 nm) substrate used for Raman comparison.1 characterization1 property1 figureReferenceSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationGraphene Magnetoresistance Control by Photoferroelectric SubstrateK. Maity, J.-F. Dayen, B. Doudin, R. Gumeniuk et al.ACS Nano·2025·10.1021/acsnano.3c07277·arXiv:2405.03663AbstractUltralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device-property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to magnetic dimensions and advance wireless operation for sensors and field-effect transistors.Read more
CVD-deposited graphene on PMN-PT30% photoferroelectric substrate used for Raman and magnetotransport measurements.1 characterization12 properties4 figuresExperimentalCStudied MaterialPMN-PTSubstrate / DielectricExpand
Bare PMN-PT30% substrate used for Raman comparison and ferroelectric characterization.1 characterization1 property1 figureReferencePMN-PTSubstrate / DielectricExpand
Bare Si/SiO₂(300 nm) substrate used for Raman comparison.1 characterization1 property1 figureReferenceSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationGraphene Magnetoresistance Control by Photoferroelectric SubstrateK. Maity, J.-F. Dayen, B. Doudin, R. Gumeniuk et al.ACS Nano·2025·10.1021/acsnano.3c07277·arXiv:2405.03663AbstractUltralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device-property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to magnetic dimensions and advance wireless operation for sensors and field-effect transistors.Read more
CVD-deposited graphene on PMN-PT30% photoferroelectric substrate used for Raman and magnetotransport measurements.1 characterization12 properties4 figuresExperimentalCStudied MaterialPMN-PTSubstrate / DielectricExpand
Bare PMN-PT30% substrate used for Raman comparison and ferroelectric characterization.1 characterization1 property1 figureReferencePMN-PTSubstrate / DielectricExpand
Bare Si/SiO₂(300 nm) substrate used for Raman comparison.1 characterization1 property1 figureReferenceSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationGraphene Magnetoresistance Control by Photoferroelectric SubstrateK. Maity, J.-F. Dayen, B. Doudin, R. Gumeniuk et al.ACS Nano·2025·10.1021/acsnano.3c07277·arXiv:2405.03663AbstractUltralow dimensionality of 2D layers magnifies their sensitivity to adjacent charges enabling even postprocessing electric control of multifunctional structures. However, functionalizing 2D layers remains an important challenge for on-demand device-property exploitation. Here we report that an electrical and even fully optical way to control and write modifications to the magnetoresistive response of CVD-deposited graphene is achievable through the electrostatics of the photoferroelectric substrate. For electrical control, the ferroelectric polarization switch modifies graphene magnetoresistance by 67% due to a Fermi level shift with related modification in charge mobility. A similar function is also attained entirely by bandgap light due to the substrate photovoltaic effect. Moreover, an all-optical way to imprint and recover graphene magnetoresistance by light is reported as well as magnetic control of graphene transconductance. These findings extend photoferroelectric control in 2D structures to magnetic dimensions and advance wireless operation for sensors and field-effect transistors.Read more
CVD-deposited graphene on PMN-PT30% photoferroelectric substrate used for Raman and magnetotransport measurements.1 characterization12 properties4 figuresExperimentalCStudied MaterialPMN-PTSubstrate / DielectricExpand
Bare PMN-PT30% substrate used for Raman comparison and ferroelectric characterization.1 characterization1 property1 figureReferencePMN-PTSubstrate / DielectricExpand
Bare Si/SiO₂(300 nm) substrate used for Raman comparison.1 characterization1 property1 figureReferenceSiO₂Substrate / DielectricSiSubstrate / DielectricExpand