Research paperExperimental CharacterizationProbing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctionsA. Díez-Carlón, J. Díez-Mérida, P. Rout, D. Sedov et al.2025·10.1103/ccb4-tqxq·arXiv:2502.04785AbstractWhile extensively studied in normal metals, semimetals and semiconductors, the superconducting proximity effect remains elusive in flat-band systems. This work studies superconducting NbTiN / twisted bilayer graphene / NbTiN Josephson junctions with twist-angle-tunable bandwidths from dispersive to flat-band regimes. The devices exhibit robust proximity-induced superconductivity even in the flat-band limit, dome-shaped superconducting regions near specific fillings, unconventional interference patterns, and a breakdown of the usual Ic-GN scaling, suggesting strong interaction and possible quantum-geometric or multiband effects.Read more
Device D1: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 propertyExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D2: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 characterization14 properties6 figuresExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D3: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 propertyExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationProbing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctionsA. Díez-Carlón, J. Díez-Mérida, P. Rout, D. Sedov et al.2025·10.1103/ccb4-tqxq·arXiv:2502.04785AbstractWhile extensively studied in normal metals, semimetals and semiconductors, the superconducting proximity effect remains elusive in flat-band systems. This work studies superconducting NbTiN / twisted bilayer graphene / NbTiN Josephson junctions with twist-angle-tunable bandwidths from dispersive to flat-band regimes. The devices exhibit robust proximity-induced superconductivity even in the flat-band limit, dome-shaped superconducting regions near specific fillings, unconventional interference patterns, and a breakdown of the usual Ic-GN scaling, suggesting strong interaction and possible quantum-geometric or multiband effects.Read more
Device D1: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 propertyExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D2: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 characterization14 properties6 figuresExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D3: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 propertyExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationProbing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctionsA. Díez-Carlón, J. Díez-Mérida, P. Rout, D. Sedov et al.2025·10.1103/ccb4-tqxq·arXiv:2502.04785AbstractWhile extensively studied in normal metals, semimetals and semiconductors, the superconducting proximity effect remains elusive in flat-band systems. This work studies superconducting NbTiN / twisted bilayer graphene / NbTiN Josephson junctions with twist-angle-tunable bandwidths from dispersive to flat-band regimes. The devices exhibit robust proximity-induced superconductivity even in the flat-band limit, dome-shaped superconducting regions near specific fillings, unconventional interference patterns, and a breakdown of the usual Ic-GN scaling, suggesting strong interaction and possible quantum-geometric or multiband effects.Read more
Device D1: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 propertyExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D2: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 characterization14 properties6 figuresExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D3: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 propertyExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationProbing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctionsA. Díez-Carlón, J. Díez-Mérida, P. Rout, D. Sedov et al.2025·10.1103/ccb4-tqxq·arXiv:2502.04785AbstractWhile extensively studied in normal metals, semimetals and semiconductors, the superconducting proximity effect remains elusive in flat-band systems. This work studies superconducting NbTiN / twisted bilayer graphene / NbTiN Josephson junctions with twist-angle-tunable bandwidths from dispersive to flat-band regimes. The devices exhibit robust proximity-induced superconductivity even in the flat-band limit, dome-shaped superconducting regions near specific fillings, unconventional interference patterns, and a breakdown of the usual Ic-GN scaling, suggesting strong interaction and possible quantum-geometric or multiband effects.Read more
Device D1: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 propertyExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D2: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 characterization14 properties6 figuresExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D3: TBG Josephson junction encapsulated in hBN and contacted with sputtered NbTiN edge electrodes on SiO₂/Si back gate.1 propertyExperimentalCStudied MaterialNbTiNCapping Or ContacthBNSubstrate / DielectricSiO₂Substrate / DielectricSiSubstrate / DielectricExpand