Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | resistance maxima / correlated insulating fillings | peaks at integer fillings ν = 0, ±2, ±4 | — | |||
| Fet Threshold Voltage | proximity-induced superconducting regions | superconducting domes appear across almost the entire density range | — | |||
| Fet On Off Ratio | Ic in flat-bands | 65nA | — | |||
| Fet On Off Ratio | Ic in dispersive bands | 350nA | — | |||
| Fet Sheet Resistance | Fraunhofer oscillation period | 2.5mT | — | |||
| Fet Sheet Resistance | expected periodicity from physical area | 2.3mT | — | |||
| Fet Sheet Resistance | junction area | 0.33um² | — | |||
| Fet Sheet Resistance | twist angle | 1deg | — | |||
| Fet Sheet Resistance | mesa width W | 1.5um | — | |||
| Fet Sheet Resistance | junction length L | 200nm | — | |||
| Fet Sheet Resistance | London penetration depth λL | 400nm | — | |||
| Fet Sheet Resistance | NbTiN film thickness | 110nm | — | |||
| Fet Sheet Resistance | electrode length across the junction Ls | 400nm | — | |||
| Fet Sheet Resistance | twist angle | 1.24deg | — | |||
| Fet Sheet Resistance | twist angle | 0.94deg | — | |||
| Fet Sheet Resistance | twist angle | 1deg | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | resistance maxima / correlated insulating fillings | peaks at integer fillings ν = 0, ±2, ±4 | — | |||
| Fet Threshold Voltage | proximity-induced superconducting regions | superconducting domes appear across almost the entire density range | — | |||
| Fet On Off Ratio | Ic in flat-bands | 65nA | — | |||
| Fet On Off Ratio | Ic in dispersive bands | 350nA | — | |||
| Fet Sheet Resistance | Fraunhofer oscillation period | 2.5mT | — | |||
| Fet Sheet Resistance | expected periodicity from physical area | 2.3mT | — | |||
| Fet Sheet Resistance | junction area | 0.33um² | — | |||
| Fet Sheet Resistance | twist angle | 1deg | — | |||
| Fet Sheet Resistance | mesa width W | 1.5um | — | |||
| Fet Sheet Resistance | junction length L | 200nm | — | |||
| Fet Sheet Resistance | London penetration depth λL | 400nm | — | |||
| Fet Sheet Resistance | NbTiN film thickness | 110nm | — | |||
| Fet Sheet Resistance | electrode length across the junction Ls | 400nm | — | |||
| Fet Sheet Resistance | twist angle | 1.24deg | — | |||
| Fet Sheet Resistance | twist angle | 0.94deg | — | |||
| Fet Sheet Resistance | twist angle | 1deg | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | resistance maxima / correlated insulating fillings | peaks at integer fillings ν = 0, ±2, ±4 | — | |||
| Fet Threshold Voltage | proximity-induced superconducting regions | superconducting domes appear across almost the entire density range | — | |||
| Fet On Off Ratio | Ic in flat-bands | 65nA | — | |||
| Fet On Off Ratio | Ic in dispersive bands | 350nA | — | |||
| Fet Sheet Resistance | Fraunhofer oscillation period | 2.5mT | — | |||
| Fet Sheet Resistance | expected periodicity from physical area | 2.3mT | — | |||
| Fet Sheet Resistance | junction area | 0.33um² | — | |||
| Fet Sheet Resistance | twist angle | 1deg | — | |||
| Fet Sheet Resistance | mesa width W | 1.5um | — | |||
| Fet Sheet Resistance | junction length L | 200nm | — | |||
| Fet Sheet Resistance | London penetration depth λL | 400nm | — | |||
| Fet Sheet Resistance | NbTiN film thickness | 110nm | — | |||
| Fet Sheet Resistance | electrode length across the junction Ls | 400nm | — | |||
| Fet Sheet Resistance | twist angle | 1.24deg | — | |||
| Fet Sheet Resistance | twist angle | 0.94deg | — | |||
| Fet Sheet Resistance | twist angle | 1deg | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | resistance maxima / correlated insulating fillings | peaks at integer fillings ν = 0, ±2, ±4 | — | |||
| Fet Threshold Voltage | proximity-induced superconducting regions | superconducting domes appear across almost the entire density range | — | |||
| Fet On Off Ratio | Ic in flat-bands | 65nA | — | |||
| Fet On Off Ratio | Ic in dispersive bands | 350nA | — | |||
| Fet Sheet Resistance | Fraunhofer oscillation period | 2.5mT | — | |||
| Fet Sheet Resistance | expected periodicity from physical area | 2.3mT | — | |||
| Fet Sheet Resistance | junction area | 0.33um² | — | |||
| Fet Sheet Resistance | twist angle | 1deg | — | |||
| Fet Sheet Resistance | mesa width W | 1.5um | — | |||
| Fet Sheet Resistance | junction length L | 200nm | — | |||
| Fet Sheet Resistance | London penetration depth λL | 400nm | — | |||
| Fet Sheet Resistance | NbTiN film thickness | 110nm | — | |||
| Fet Sheet Resistance | electrode length across the junction Ls | 400nm | — | |||
| Fet Sheet Resistance | twist angle | 1.24deg | — | |||
| Fet Sheet Resistance | twist angle | 0.94deg | — | |||
| Fet Sheet Resistance | twist angle | 1deg | — |