Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization8 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | quantized Hall resistance at ν = 1/4 | h/e2ohm/sq | — | |||
| Fet Sheet Resistance | longitudinal resistance at ν = 1/4 | 0ohm/sq | — | |||
| Fet Carrier Concentration | carrier density at ν = 1/4 | 0.32310¹² cm⁻² | — | |||
| Fet Threshold Voltage | displacement field for the ν = 1/4 state | 0.53V/nm | — | |||
| Fet Threshold Voltage | coercive field | 50mT | — | |||
| Fet Threshold Voltage | temperature stability limit of quantized Hall resistance | 400mK | — | |||
| Fet On Off Ratio | Chern number at ν = 1/4 | 1 | — | |||
| Fet On Off Ratio | Chern number magnitude of fractional TEC states | 1 | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization8 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | quantized Hall resistance at ν = 1/4 | h/e2ohm/sq | — | |||
| Fet Sheet Resistance | longitudinal resistance at ν = 1/4 | 0ohm/sq | — | |||
| Fet Carrier Concentration | carrier density at ν = 1/4 | 0.32310¹² cm⁻² | — | |||
| Fet Threshold Voltage | displacement field for the ν = 1/4 state | 0.53V/nm | — | |||
| Fet Threshold Voltage | coercive field | 50mT | — | |||
| Fet Threshold Voltage | temperature stability limit of quantized Hall resistance | 400mK | — | |||
| Fet On Off Ratio | Chern number at ν = 1/4 | 1 | — | |||
| Fet On Off Ratio | Chern number magnitude of fractional TEC states | 1 | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization8 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | quantized Hall resistance at ν = 1/4 | h/e2ohm/sq | — | |||
| Fet Sheet Resistance | longitudinal resistance at ν = 1/4 | 0ohm/sq | — | |||
| Fet Carrier Concentration | carrier density at ν = 1/4 | 0.32310¹² cm⁻² | — | |||
| Fet Threshold Voltage | displacement field for the ν = 1/4 state | 0.53V/nm | — | |||
| Fet Threshold Voltage | coercive field | 50mT | — | |||
| Fet Threshold Voltage | temperature stability limit of quantized Hall resistance | 400mK | — | |||
| Fet On Off Ratio | Chern number at ν = 1/4 | 1 | — | |||
| Fet On Off Ratio | Chern number magnitude of fractional TEC states | 1 | — |
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization8 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Sheet Resistance | quantized Hall resistance at ν = 1/4 | h/e2ohm/sq | — | |||
| Fet Sheet Resistance | longitudinal resistance at ν = 1/4 | 0ohm/sq | — | |||
| Fet Carrier Concentration | carrier density at ν = 1/4 | 0.32310¹² cm⁻² | — | |||
| Fet Threshold Voltage | displacement field for the ν = 1/4 state | 0.53V/nm | — | |||
| Fet Threshold Voltage | coercive field | 50mT | — | |||
| Fet Threshold Voltage | temperature stability limit of quantized Hall resistance | 400mK | — | |||
| Fet On Off Ratio | Chern number at ν = 1/4 | 1 | — | |||
| Fet On Off Ratio | Chern number magnitude of fractional TEC states | 1 | — |