Abstract

This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe two-dimensional electron gas (2DEG) formation and carrier confinement under equilibrium conditions. Additionally, I-V and C-V data from fabricated research-grade GaN HEMTs were analyzed to extract key electrical parameters. The device demonstrated an ON current of 1.9 mA and an OFF current of 0.01 mA, indicating a strong ON/OFF current ratio. A subthreshold swing of 80 mV/decade and a DIBL of 5 mV/V were observed, confirming good gate control and short-channel suppression. The ON-resistance was 22.72 Ω·µm, with a saturation voltage of 1 V. The peak transconductance was extracted as 0.18 mS in the linear region and 0.5 mS in saturation. Field-effect mobility was calculated using the transconductance method, with a maximum value of approximately 1200 cm²/V·s at low drain bias. The combined simulation and experimental approach provided comprehensive insight into GaN HEMT behavior, enabling a deeper understanding of structure-performance relationships critical to advanced transistor design.

Abstract

This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe two-dimensional electron gas (2DEG) formation and carrier confinement under equilibrium conditions. Additionally, I-V and C-V data from fabricated research-grade GaN HEMTs were analyzed to extract key electrical parameters. The device demonstrated an ON current of 1.9 mA and an OFF current of 0.01 mA, indicating a strong ON/OFF current ratio. A subthreshold swing of 80 mV/decade and a DIBL of 5 mV/V were observed, confirming good gate control and short-channel suppression. The ON-resistance was 22.72 Ω·µm, with a saturation voltage of 1 V. The peak transconductance was extracted as 0.18 mS in the linear region and 0.5 mS in saturation. Field-effect mobility was calculated using the transconductance method, with a maximum value of approximately 1200 cm²/V·s at low drain bias. The combined simulation and experimental approach provided comprehensive insight into GaN HEMT behavior, enabling a deeper understanding of structure-performance relationships critical to advanced transistor design.

Abstract

This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe two-dimensional electron gas (2DEG) formation and carrier confinement under equilibrium conditions. Additionally, I-V and C-V data from fabricated research-grade GaN HEMTs were analyzed to extract key electrical parameters. The device demonstrated an ON current of 1.9 mA and an OFF current of 0.01 mA, indicating a strong ON/OFF current ratio. A subthreshold swing of 80 mV/decade and a DIBL of 5 mV/V were observed, confirming good gate control and short-channel suppression. The ON-resistance was 22.72 Ω·µm, with a saturation voltage of 1 V. The peak transconductance was extracted as 0.18 mS in the linear region and 0.5 mS in saturation. Field-effect mobility was calculated using the transconductance method, with a maximum value of approximately 1200 cm²/V·s at low drain bias. The combined simulation and experimental approach provided comprehensive insight into GaN HEMT behavior, enabling a deeper understanding of structure-performance relationships critical to advanced transistor design.

Abstract

This paper presents an analysis of GaN high-electron-mobility transistors (HEMTs) using both TCAD simulation and experimental characterization. The energy band structure was studied using Nextnano simulation software to observe two-dimensional electron gas (2DEG) formation and carrier confinement under equilibrium conditions. Additionally, I-V and C-V data from fabricated research-grade GaN HEMTs were analyzed to extract key electrical parameters. The device demonstrated an ON current of 1.9 mA and an OFF current of 0.01 mA, indicating a strong ON/OFF current ratio. A subthreshold swing of 80 mV/decade and a DIBL of 5 mV/V were observed, confirming good gate control and short-channel suppression. The ON-resistance was 22.72 Ω·µm, with a saturation voltage of 1 V. The peak transconductance was extracted as 0.18 mS in the linear region and 0.5 mS in saturation. Field-effect mobility was calculated using the transconductance method, with a maximum value of approximately 1200 cm²/V·s at low drain bias. The combined simulation and experimental approach provided comprehensive insight into GaN HEMT behavior, enabling a deeper understanding of structure-performance relationships critical to advanced transistor design.