Research paper
Experimental CharacterizationComputational MultiscaleTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization5 properties2 figures
1 characterization5 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | maximum drain efficiency | 74% | — | |||
| Fet On Off Ratio | maximum drain efficiency | 74% | — | |||
| Output Power | maximum output power | 44.1dBm | — | |||
| Output Power | maximum output power | 44.1dBm | — | |||
| Fet On Off Ratio | drain efficiency at 9-dB back-off | 52% | — | |||
| Fet On Off Ratio | drain efficiency at 9-dB back-off | 52% | — | |||
| Fet On Off Ratio | average power-added efficiency after DPD | 51% | — | |||
| Fet On Off Ratio | average power-added efficiency after DPD | 51% | — | |||
| Adjacent Channel Leakage Ratio | ACLR after DPD | better than -60.8dBc | — | |||
| Adjacent Channel Leakage Ratio | ACLR after DPD | better than -60.8dBc | — |
Related documents with shared materials, methods, properties, or citations.
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization5 properties2 figures
1 characterization5 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | maximum drain efficiency | 74% | — | |||
| Fet On Off Ratio | maximum drain efficiency | 74% | — | |||
| Output Power | maximum output power | 44.1dBm | — | |||
| Output Power | maximum output power | 44.1dBm | — | |||
| Fet On Off Ratio | drain efficiency at 9-dB back-off | 52% | — | |||
| Fet On Off Ratio | drain efficiency at 9-dB back-off | 52% | — | |||
| Fet On Off Ratio | average power-added efficiency after DPD | 51% | — | |||
| Fet On Off Ratio | average power-added efficiency after DPD | 51% | — | |||
| Adjacent Channel Leakage Ratio | ACLR after DPD | better than -60.8dBc | — | |||
| Adjacent Channel Leakage Ratio | ACLR after DPD | better than -60.8dBc | — |
Related documents with shared materials, methods, properties, or citations.
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization5 properties2 figures
1 characterization5 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | maximum drain efficiency | 74% | — | |||
| Fet On Off Ratio | maximum drain efficiency | 74% | — | |||
| Output Power | maximum output power | 44.1dBm | — | |||
| Output Power | maximum output power | 44.1dBm | — | |||
| Fet On Off Ratio | drain efficiency at 9-dB back-off | 52% | — | |||
| Fet On Off Ratio | drain efficiency at 9-dB back-off | 52% | — | |||
| Fet On Off Ratio | average power-added efficiency after DPD | 51% | — | |||
| Fet On Off Ratio | average power-added efficiency after DPD | 51% | — | |||
| Adjacent Channel Leakage Ratio | ACLR after DPD | better than -60.8dBc | — | |||
| Adjacent Channel Leakage Ratio | ACLR after DPD | better than -60.8dBc | — |
Related documents with shared materials, methods, properties, or citations.
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization5 properties2 figures
1 characterization5 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet On Off Ratio | maximum drain efficiency | 74% | — | |||
| Fet On Off Ratio | maximum drain efficiency | 74% | — | |||
| Output Power | maximum output power | 44.1dBm | — | |||
| Output Power | maximum output power | 44.1dBm | — | |||
| Fet On Off Ratio | drain efficiency at 9-dB back-off | 52% | — | |||
| Fet On Off Ratio | drain efficiency at 9-dB back-off | 52% | — | |||
| Fet On Off Ratio | average power-added efficiency after DPD | 51% | — | |||
| Fet On Off Ratio | average power-added efficiency after DPD | 51% | — | |||
| Adjacent Channel Leakage Ratio | ACLR after DPD | better than -60.8dBc | — | |||
| Adjacent Channel Leakage Ratio | ACLR after DPD | better than -60.8dBc | — |
Related documents with shared materials, methods, properties, or citations.
Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data
Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier
Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes
Two-Carrier Model-Fitting of Hall Effect in Semiconductors with Dual-Band Occupation: A Case Study in GaN Two-Dimensional Hole Gas
Miniaturized time-correlated single-photon counting module for time-of-flight non-line-of-sight imaging applications