Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | RMS time resolution | 27.4ps | — | |||
| Fet Mobility | FWHM time resolution | 64.5ps | — | |||
| Fet On Off Ratio | DNL maximum | 0.17LSB | — | |||
| Fet On Off Ratio | INL maximum | 8.49LSB | — | |||
| Fet Threshold Voltage | bin size | 10ps | — | |||
| Fet On Off Ratio | photon detection efficiency at 1550 nm | 54% | — | |||
| Fet Sheet Resistance | dark count rate | 2000cps | — | |||
| Fet Threshold Voltage | timing jitter | 110ps | — | |||
| Fet Threshold Voltage | lateral resolution | 6.3cm | — | |||
| Fet Threshold Voltage | depth resolution | 2.3cm | — |
Topological electronic crystals in twisted bilayer–trilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | RMS time resolution | 27.4ps | — | |||
| Fet Mobility | FWHM time resolution | 64.5ps | — | |||
| Fet On Off Ratio | DNL maximum | 0.17LSB | — | |||
| Fet On Off Ratio | INL maximum | 8.49LSB | — | |||
| Fet Threshold Voltage | bin size | 10ps | — | |||
| Fet On Off Ratio | photon detection efficiency at 1550 nm | 54% | — | |||
| Fet Sheet Resistance | dark count rate | 2000cps | — | |||
| Fet Threshold Voltage | timing jitter | 110ps | — | |||
| Fet Threshold Voltage | lateral resolution | 6.3cm | — | |||
| Fet Threshold Voltage | depth resolution | 2.3cm | — |
Topological electronic crystals in twisted bilayer–trilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | RMS time resolution | 27.4ps | — | |||
| Fet Mobility | FWHM time resolution | 64.5ps | — | |||
| Fet On Off Ratio | DNL maximum | 0.17LSB | — | |||
| Fet On Off Ratio | INL maximum | 8.49LSB | — | |||
| Fet Threshold Voltage | bin size | 10ps | — | |||
| Fet On Off Ratio | photon detection efficiency at 1550 nm | 54% | — | |||
| Fet Sheet Resistance | dark count rate | 2000cps | — | |||
| Fet Threshold Voltage | timing jitter | 110ps | — | |||
| Fet Threshold Voltage | lateral resolution | 6.3cm | — | |||
| Fet Threshold Voltage | depth resolution | 2.3cm | — |
Topological electronic crystals in twisted bilayer–trilayer graphene
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | RMS time resolution | 27.4ps | — | |||
| Fet Mobility | FWHM time resolution | 64.5ps | — | |||
| Fet On Off Ratio | DNL maximum | 0.17LSB | — | |||
| Fet On Off Ratio | INL maximum | 8.49LSB | — | |||
| Fet Threshold Voltage | bin size | 10ps | — | |||
| Fet On Off Ratio | photon detection efficiency at 1550 nm | 54% | — | |||
| Fet Sheet Resistance | dark count rate | 2000cps | — | |||
| Fet Threshold Voltage | timing jitter | 110ps | — | |||
| Fet Threshold Voltage | lateral resolution | 6.3cm | — | |||
| Fet Threshold Voltage | depth resolution | 2.3cm | — |
Topological electronic crystals in twisted bilayer–trilayer graphene