Abstract

We report a direct signature of axionic physics obtained through scanning tunneling microscopy (STM). Using an SmB₆ nanowire tip and magnetic Fe₁+xTe substrate, we show that the observed voltage-reversed spin contrast originates from axionic electrodynamics rather than static magnetism or spin-polarized currents from topological surface states. Small voltages on the order of tens of meV generate tip moments of order 0.1 μB that reverse with applied bias, consistent with a voltage-induced magnetization on the SmB₆ surface.

Abstract

We report a direct signature of axionic physics obtained through scanning tunneling microscopy (STM). Using an SmB₆ nanowire tip and magnetic Fe₁+xTe substrate, we show that the observed voltage-reversed spin contrast originates from axionic electrodynamics rather than static magnetism or spin-polarized currents from topological surface states. Small voltages on the order of tens of meV generate tip moments of order 0.1 μB that reverse with applied bias, consistent with a voltage-induced magnetization on the SmB₆ surface.

Abstract

We report a direct signature of axionic physics obtained through scanning tunneling microscopy (STM). Using an SmB₆ nanowire tip and magnetic Fe₁+xTe substrate, we show that the observed voltage-reversed spin contrast originates from axionic electrodynamics rather than static magnetism or spin-polarized currents from topological surface states. Small voltages on the order of tens of meV generate tip moments of order 0.1 μB that reverse with applied bias, consistent with a voltage-induced magnetization on the SmB₆ surface.

Abstract

We report a direct signature of axionic physics obtained through scanning tunneling microscopy (STM). Using an SmB₆ nanowire tip and magnetic Fe₁+xTe substrate, we show that the observed voltage-reversed spin contrast originates from axionic electrodynamics rather than static magnetism or spin-polarized currents from topological surface states. Small voltages on the order of tens of meV generate tip moments of order 0.1 μB that reverse with applied bias, consistent with a voltage-induced magnetization on the SmB₆ surface.