Integrated Mode-Hop-Free Tunable Lasers at 780 nm for Chip-Scale Classical and Quantum Photonic Applications

Joshua E. Castro; Eber Nolasco-Martinez; Paolo Pintus; Zeyu Zhang; Boqiang Shen; Theodore Morin; Lillian Thiel; Trevor J. Steiner; Nicholas Lewis; Sahil D. Patel; John E. Bowers; David M. Weld; Galan Moody

doi:10.1364/ao.XX.XXXXXX

Paper details

Research paper

Experimental Characterization

Integrated Mode-Hop-Free Tunable Lasers at 780 nm for Chip-Scale Classical and Quantum Photonic Applications

Joshua E. Castro, Eber Nolasco-Martinez, Paolo Pintus, Zeyu Zhang et al.

Applied Optics·2024·10.1364/ao.XX.XXXXXX·arXiv:2407.15438

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Integrated heterogeneous GaAs-on-SiN tunable laser chip with GaAs gain regions bonded onto silicon nitride waveguides, oxide cladding, and a silicon handle/substrate.

3 characterizations13 properties1 figure

ExperimentalGaAsStudied MaterialSi₃N₄Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Silicon nitride microresonator used for linear spectroscopy and mode mapping in the visible/near-red range.

1 characterization1 property1 figure

ExperimentalSi₃N₄Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy and laser locking.

1 characterization2 properties1 figure

Experimental87RbStudied Material

Materials

GaAs

Studied Material

Also known as

GaAs quantum wellGaAs QW

studied material

silicon nitride

Si₃N₄

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Integrated Mode-Hop-Free Tunable Lasers at 780 nm for Chip-Scale Classical and Quantum Photonic Applications | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Threshold Voltage	laser threshold current	32mA	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	35-45dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	40dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	35dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	intrinsic linewidth	5.85kHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	continuous tuning range	17nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	coarse tuning range	15nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	mode-hop-free tuning range	100GHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	mode-hop-free tuning range	200pm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	intrinsic linewidth	6kHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	quality factor Q	2000000	Si₃N₄	Silicon nitride microresonator used for linear spectroscopy	—
Fet Mobility	Rb transition line	D1	87Rb	Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy an	—
Fet Mobility	Rb transition line	D2	87Rb	Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy an	—
Fet Mobility	emission wavelength	780nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	coarse tuning span	765-795nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	output power	10mW	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Threshold Voltage	laser threshold current	32mA	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	35-45dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	40dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	35dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	intrinsic linewidth	5.85kHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	continuous tuning range	17nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	coarse tuning range	15nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	mode-hop-free tuning range	100GHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	mode-hop-free tuning range	200pm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	intrinsic linewidth	6kHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	quality factor Q	2000000	Si₃N₄	Silicon nitride microresonator used for linear spectroscopy	—
Fet Mobility	Rb transition line	D1	87Rb	Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy an	—
Fet Mobility	Rb transition line	D2	87Rb	Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy an	—
Fet Mobility	emission wavelength	780nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	coarse tuning span	765-795nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	output power	10mW	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Threshold Voltage	laser threshold current	32mA	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	35-45dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	40dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	35dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	intrinsic linewidth	5.85kHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	continuous tuning range	17nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	coarse tuning range	15nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	mode-hop-free tuning range	100GHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	mode-hop-free tuning range	200pm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	intrinsic linewidth	6kHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	quality factor Q	2000000	Si₃N₄	Silicon nitride microresonator used for linear spectroscopy	—
Fet Mobility	Rb transition line	D1	87Rb	Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy an	—
Fet Mobility	Rb transition line	D2	87Rb	Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy an	—
Fet Mobility	emission wavelength	780nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	coarse tuning span	765-795nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	output power	10mW	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Threshold Voltage	laser threshold current	32mA	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	35-45dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	40dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	side-mode suppression ratio	35dB	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	intrinsic linewidth	5.85kHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	continuous tuning range	17nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	coarse tuning range	15nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	mode-hop-free tuning range	100GHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	mode-hop-free tuning range	200pm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet On Off Ratio	intrinsic linewidth	6kHz	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	quality factor Q	2000000	Si₃N₄	Silicon nitride microresonator used for linear spectroscopy	—
Fet Mobility	Rb transition line	D1	87Rb	Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy an	—
Fet Mobility	Rb transition line	D2	87Rb	Rubidium⁻⁸⁷ vapor cell used for Doppler-free spectroscopy an	—
Fet Mobility	emission wavelength	780nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	coarse tuning span	765-795nm	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—
Fet Mobility	output power	10mW	GaAs Si₃N₄	Integrated heterogeneous GaAs-on-SiN tunable laser chip with	—