Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data

Compact InGaAs/InP single-photon detector module with ultra-narrowband interference circuits

Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier

Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions

Emergence of Chern metal in a moiré Kondo lattice

Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice

Graphene Magnetoresistance Control by Photoferroelectric Substrate

Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene

Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data

Compact InGaAs/InP single-photon detector module with ultra-narrowband interference circuits

Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier

Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions

Emergence of Chern metal in a moiré Kondo lattice

Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice

Graphene Magnetoresistance Control by Photoferroelectric Substrate

Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene

Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data

Compact InGaAs/InP single-photon detector module with ultra-narrowband interference circuits

Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier

Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions

Emergence of Chern metal in a moiré Kondo lattice

Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice

Graphene Magnetoresistance Control by Photoferroelectric Substrate

Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene

Mobility Extraction and Analysis of GaN HEMTs for RF Applications Using TCAD and Experimental Data

Compact InGaAs/InP single-photon detector module with ultra-narrowband interference circuits

Design of a High-Power and High-Efficiency GaN-HEMT VCO Based on an Inverse Class-F Amplifier

Probing the flat-band limit of the superconducting proximity effect in Twisted Bilayer Graphene Josephson junctions

Emergence of Chern metal in a moiré Kondo lattice

Interplay of Landau quantization and interminivalley scatterings in a weakly coupled moiré superlattice

Graphene Magnetoresistance Control by Photoferroelectric Substrate

Subthermal Mean Transverse Energies Induced by Electron Refraction on the Jump in Mass at the Surface of Multialkali Photocathodes

Harnessing Ferro-Valleytricity in Penta-Layer Rhombohedral Graphene for Memory and Compute

Spin-Orbit Enhanced Superconductivity in Bernal Bilayer Graphene