In-plane staging in lithium-ion intercalation of bilayer graphene

Thomas Astles; James G. McHugh; Rui Zhang; Qian Guo; Madeleine Howe; Zefei Wu; Kornelia Indykiewicz; Alex Summerfield; Zachary A.H. Goodwin; Sergey Slizovskiy; Daniil Domaretskiy; Andre K. Geim; Vladimir Falko; Irina V. Grigorieva

doi:10.1002/adma.202306312

Paper details

Research paper

Experimental CharacterizationComputational DFT

In-plane staging in lithium-ion intercalation of bilayer graphene

Thomas Astles, James G. McHugh, Rui Zhang, Qian Guo et al.

2024·10.1002/adma.202306312·arXiv:2407.07838

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

2 characterizations24 properties3 figures

ExperimentalCStudied Material

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

2 characterizations24 properties3 figures

ExperimentalCStudied Material

Materials

bilayer graphene

Studied Material

Also known as

BLGgraphene bilayer

Variables

stacking= AB,AA

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

In-plane staging in lithium-ion intercalation of bilayer graphene | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	stage I	248ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage II	219ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage III	142ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage IV	134ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage I	0.9cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage II	1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage III	2.1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage IV	2.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	critical Li density for AB-to-AA transition	0.9cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	fully intercalated Li density	2.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	chemical potential drop Δμ	0.4eV	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Intercalation Energy	BLG vs bulk graphite intercalation-energy difference	20meV	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	free-energy density gain σ	2.6meV/Å2	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	domain-wall energy γ	0.16eV/Å	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	critical AA-domain radius rc	12nm	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	stoichiometric doping N for AB-stack metastable minimum	40count	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	stoichiometric doping N for thermodynamic equilibrium	14count	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	upper bound for AB stacking stability	0.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	metastability upper threshold	1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	temperature used in DFT free-energy diagram	330K	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	global minimum stoichiometry	C14LiC14	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage III stoichiometry	C18LiC18	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage II stoichiometry	C38LiC38	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage I stoichiometry	C42LiC42	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	stage I	248ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage II	219ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage III	142ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage IV	134ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage I	0.9cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage II	1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage III	2.1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage IV	2.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	critical Li density for AB-to-AA transition	0.9cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	fully intercalated Li density	2.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	chemical potential drop Δμ	0.4eV	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Intercalation Energy	BLG vs bulk graphite intercalation-energy difference	20meV	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	free-energy density gain σ	2.6meV/Å2	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	domain-wall energy γ	0.16eV/Å	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	critical AA-domain radius rc	12nm	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	stoichiometric doping N for AB-stack metastable minimum	40count	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	stoichiometric doping N for thermodynamic equilibrium	14count	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	upper bound for AB stacking stability	0.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	metastability upper threshold	1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	temperature used in DFT free-energy diagram	330K	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	global minimum stoichiometry	C14LiC14	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage III stoichiometry	C18LiC18	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage II stoichiometry	C38LiC38	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage I stoichiometry	C42LiC42	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	stage I	248ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage II	219ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage III	142ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage IV	134ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage I	0.9cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage II	1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage III	2.1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage IV	2.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	critical Li density for AB-to-AA transition	0.9cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	fully intercalated Li density	2.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	chemical potential drop Δμ	0.4eV	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Intercalation Energy	BLG vs bulk graphite intercalation-energy difference	20meV	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	free-energy density gain σ	2.6meV/Å2	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	domain-wall energy γ	0.16eV/Å	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	critical AA-domain radius rc	12nm	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	stoichiometric doping N for AB-stack metastable minimum	40count	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	stoichiometric doping N for thermodynamic equilibrium	14count	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	upper bound for AB stacking stability	0.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	metastability upper threshold	1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	temperature used in DFT free-energy diagram	330K	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	global minimum stoichiometry	C14LiC14	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage III stoichiometry	C18LiC18	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage II stoichiometry	C38LiC38	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage I stoichiometry	C42LiC42	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Sheet Resistance	stage I	248ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage II	219ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage III	142ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Sheet Resistance	stage IV	134ohm/sq	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage I	0.9cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage II	1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage III	2.1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	Li-ion density stage IV	2.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	critical Li density for AB-to-AA transition	0.9cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	fully intercalated Li density	2.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	chemical potential drop Δμ	0.4eV	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Intercalation Energy	BLG vs bulk graphite intercalation-energy difference	20meV	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	free-energy density gain σ	2.6meV/Å2	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	domain-wall energy γ	0.16eV/Å	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	critical AA-domain radius rc	12nm	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	stoichiometric doping N for AB-stack metastable minimum	40count	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	stoichiometric doping N for thermodynamic equilibrium	14count	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	upper bound for AB stacking stability	0.7cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Fet Carrier Concentration	metastability upper threshold	1cm⁻²	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	temperature used in DFT free-energy diagram	330K	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	global minimum stoichiometry	C14LiC14	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage III stoichiometry	C18LiC18	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage II stoichiometry	C38LiC38	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—
Property	stage I stoichiometry	C42LiC42	C	Device A: mechanically exfoliated bilayer graphene patterned Device B: another mechanically exfoliated bilayer graphene H	—

In-plane staging in lithium-ion intercalation of bilayer graphene

Samples

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

Materials

Why these are connected

In-plane staging in lithium-ion intercalation of bilayer graphene

Samples

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

Materials

Why these are connected

In-plane staging in lithium-ion intercalation of bilayer graphene

Samples

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

Materials

Why these are connected

In-plane staging in lithium-ion intercalation of bilayer graphene

Samples

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

Materials

Why these are connected

In-plane staging in lithium-ion intercalation of bilayer graphene

Samples

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

Materials

Why these are connected

In-plane staging in lithium-ion intercalation of bilayer graphene

Samples

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

Materials

Why these are connected

In-plane staging in lithium-ion intercalation of bilayer graphene

Samples

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

Materials

Why these are connected

In-plane staging in lithium-ion intercalation of bilayer graphene

Samples

Device A: mechanically exfoliated bilayer graphene patterned into a Hall bar on Si/SiO₂ with exposed edge to solid polymer electrolyte; studied during repeated intercalation/deintercalation cycles.

Device B: another mechanically exfoliated bilayer graphene Hall-bar device on Si/SiO2, measured under the same intercalation protocol.

Materials

Why these are connected

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations

Characterization

Properties

Simulations