Research paper
Experimental GrowthExperimental CharacterizationSingle MoS₂-flake as a high TCR non-cryogenic bolometer
Saba M. Khan, Jyoti Saini, Anirban Kundu, Renu Rani et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | flake thickness | 103nm | — | |||
| Raman Peak | E12g | 383.4cm⁻¹ | — | |||
| Raman Peak | A1g | 408.5cm⁻¹ | — | |||
| Raman Mode Separation | E12g-A1g separation | 25.1cm⁻¹ | — | |||
| Fet Sheet Resistance | baseline resistance | 729kohm | — | |||
| Fet Sheet Resistance | saturated resistance | 558kohm | — | |||
| Fet On Off Ratio | sensitivity | 23.47% | — | |||
| Fet Mobility | responsivity | 538mA/W | — | |||
| Fet Mobility | responsivity | 78mA/W | — | |||
| Fet On Off Ratio | response time | 30ms | — | |||
| Fet On Off Ratio | response time | 30ms | — | |||
| Fet Threshold Voltage | TCR | -9.5%/K | — | |||
| Fet Sheet Resistance | NEP | 0.61pWHz⁻¹/2 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | flake thickness | 103nm | — | |||
| Raman Peak | E12g | 383.4cm⁻¹ | — | |||
| Raman Peak | A1g | 408.5cm⁻¹ | — | |||
| Raman Mode Separation | E12g-A1g separation | 25.1cm⁻¹ | — | |||
| Fet Sheet Resistance | baseline resistance | 729kohm | — | |||
| Fet Sheet Resistance | saturated resistance | 558kohm | — | |||
| Fet On Off Ratio | sensitivity | 23.47% | — | |||
| Fet Mobility | responsivity | 538mA/W | — | |||
| Fet Mobility | responsivity | 78mA/W | — | |||
| Fet On Off Ratio | response time | 30ms | — | |||
| Fet On Off Ratio | response time | 30ms | — | |||
| Fet Threshold Voltage | TCR | -9.5%/K | — | |||
| Fet Sheet Resistance | NEP | 0.61pWHz⁻¹/2 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | flake thickness | 103nm | — | |||
| Raman Peak | E12g | 383.4cm⁻¹ | — | |||
| Raman Peak | A1g | 408.5cm⁻¹ | — | |||
| Raman Mode Separation | E12g-A1g separation | 25.1cm⁻¹ | — | |||
| Fet Sheet Resistance | baseline resistance | 729kohm | — | |||
| Fet Sheet Resistance | saturated resistance | 558kohm | — | |||
| Fet On Off Ratio | sensitivity | 23.47% | — | |||
| Fet Mobility | responsivity | 538mA/W | — | |||
| Fet Mobility | responsivity | 78mA/W | — | |||
| Fet On Off Ratio | response time | 30ms | — | |||
| Fet On Off Ratio | response time | 30ms | — | |||
| Fet Threshold Voltage | TCR | -9.5%/K | — | |||
| Fet Sheet Resistance | NEP | 0.61pWHz⁻¹/2 | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | flake thickness | 103nm | — | |||
| Raman Peak | E12g | 383.4cm⁻¹ | — | |||
| Raman Peak | A1g | 408.5cm⁻¹ | — | |||
| Raman Mode Separation | E12g-A1g separation | 25.1cm⁻¹ | — | |||
| Fet Sheet Resistance | baseline resistance | 729kohm | — | |||
| Fet Sheet Resistance | saturated resistance | 558kohm | — | |||
| Fet On Off Ratio | sensitivity | 23.47% | — | |||
| Fet Mobility | responsivity | 538mA/W | — | |||
| Fet Mobility | responsivity | 78mA/W | — | |||
| Fet On Off Ratio | response time | 30ms | — | |||
| Fet On Off Ratio | response time | 30ms | — | |||
| Fet Threshold Voltage | TCR | -9.5%/K | — | |||
| Fet Sheet Resistance | NEP | 0.61pWHz⁻¹/2 | — |
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