High Performance MoS2 Phototransistors Photogated by PN Junction

Paper details

Research paper

Experimental CharacterizationTheoretical

High Performance MoS₂ Phototransistors Photogated by PN Junction

Seyed Saleh Mousavi Khaleghi, Jianyong Wei, Yumeng Liu, Zhengfang Fan et al.

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

2 characterizations6 properties1 figure

ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricSiO₂Substrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact

2 characterizations5 properties2 figures

ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact

1 characterization2 figures

ExperimentalMoS₂Studied MaterialSiSubstrate / DielectricHfO₂Substrate / DielectricAuCapping Or ContactBiCapping Or Contact

MoS₂

Studied Material

Variables

dimensionality= few-layer

studied material

silicon

Substrate / Dielectric

Also known as

Related documents with shared materials, methods, properties, or citations.

High Performance MoS2 Phototransistors Photogated by PN Junction | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	E2g	384.59cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Raman Peak	A1g	404.22cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Raman Mode Separation	E2g-A1g separation	20.63cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
PL Peak	MoS₂ crystal peak	1.82eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
PL Peak	defect-related peak	1.98eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Optical Band Gap	MoS₂ optical gap inferred from PL	1.82eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Fet Sheet Resistance	photoresponsivity at 660 nm	1A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity at long wavelength limit	0.03A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity maximum	32A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity at 1100 nm	3.68A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	responsivity enhancement over WOJ	460dimensionless	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Ir Band Position	IR band	404.22cm⁻¹	MoS₂	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	E2g	384.59cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Raman Peak	A1g	404.22cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Raman Mode Separation	E2g-A1g separation	20.63cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
PL Peak	MoS₂ crystal peak	1.82eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
PL Peak	defect-related peak	1.98eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Optical Band Gap	MoS₂ optical gap inferred from PL	1.82eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Fet Sheet Resistance	photoresponsivity at 660 nm	1A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity at long wavelength limit	0.03A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity maximum	32A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity at 1100 nm	3.68A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	responsivity enhancement over WOJ	460dimensionless	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Ir Band Position	IR band	404.22cm⁻¹	MoS₂	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	E2g	384.59cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Raman Peak	A1g	404.22cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Raman Mode Separation	E2g-A1g separation	20.63cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
PL Peak	MoS₂ crystal peak	1.82eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
PL Peak	defect-related peak	1.98eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Optical Band Gap	MoS₂ optical gap inferred from PL	1.82eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Fet Sheet Resistance	photoresponsivity at 660 nm	1A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity at long wavelength limit	0.03A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity maximum	32A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity at 1100 nm	3.68A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	responsivity enhancement over WOJ	460dimensionless	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Ir Band Position	IR band	404.22cm⁻¹	MoS₂	—	—	—

Type	Label	Value	Material	Sample	Condition	Source
Raman Peak	E2g	384.59cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Raman Peak	A1g	404.22cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Raman Mode Separation	E2g-A1g separation	20.63cm⁻¹	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
PL Peak	MoS₂ crystal peak	1.82eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
PL Peak	defect-related peak	1.98eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Optical Band Gap	MoS₂ optical gap inferred from PL	1.82eV	MoS₂	Few-layer MoS₂ flake on SiO2, used for Raman/PL characteriza		—
Fet Sheet Resistance	photoresponsivity at 660 nm	1A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity at long wavelength limit	0.03A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity maximum	32A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	photoresponsivity at 1100 nm	3.68A/W	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Fet Sheet Resistance	responsivity enhancement over WOJ	460dimensionless	MoS₂	MoS₂ phototransistor device with Si PN junction photogate (W		—
Ir Band Position	IR band	404.22cm⁻¹	MoS₂	—	—	—