Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Jakob Ziewer; Abyay Ghosh; Michaela Hanušová; Luka Pirker; Otakar Frank; Matěj Velický; Myrta Grüning; Fumin Huang

doi:10.1002/adma.202419184

Paper details

Research paper

Experimental CharacterizationComputational DFT

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Jakob Ziewer, Abyay Ghosh, Michaela Hanušová, Luka Pirker et al.

2024·10.1002/adma.202419184·arXiv:2412.05898

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

4 characterizations9 properties3 figures

ExperimentalMoS₂Studied Material

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

3 characterizations2 properties3 figures

ExperimentalMoS₂Studied Material

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

3 characterizations1 property3 figures

ExperimentalMoS₂Studied Material

Materials

MoS₂

Studied Material

Also known as

molybdenum disulfide

studied material

gold

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	E2g	380cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	A1g	396cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	A1g	404.5cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	E(L)	377.8cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	E(L)	380cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Intensity Ratio	E2g/Si and A1g/Si intensity ratios	quasi-linear with layer number	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comp MoS₂ exfoliated on Au substrates of varying thicknesses (2,	—
Strain	biaxial strain	1.1%	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Carrier Concentration	electron concentration	3600000000000cm⁻²	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Flake Size	lateral size	1000um	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Flake Size	lateral size	<20um	MoS₂	MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comp	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	E2g	380cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	A1g	396cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	A1g	404.5cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	E(L)	377.8cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	E(L)	380cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Intensity Ratio	E2g/Si and A1g/Si intensity ratios	quasi-linear with layer number	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comp MoS₂ exfoliated on Au substrates of varying thicknesses (2,	—
Strain	biaxial strain	1.1%	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Carrier Concentration	electron concentration	3600000000000cm⁻²	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Flake Size	lateral size	1000um	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Flake Size	lateral size	<20um	MoS₂	MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comp	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	E2g	380cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	A1g	396cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	A1g	404.5cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	E(L)	377.8cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	E(L)	380cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Intensity Ratio	E2g/Si and A1g/Si intensity ratios	quasi-linear with layer number	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comp MoS₂ exfoliated on Au substrates of varying thicknesses (2,	—
Strain	biaxial strain	1.1%	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Carrier Concentration	electron concentration	3600000000000cm⁻²	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Flake Size	lateral size	1000um	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Flake Size	lateral size	<20um	MoS₂	MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comp	—

Properties

Type	Label	Value	Material	Sample	Source
Raman Peak	E2g	380cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	A1g	396cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	A1g	404.5cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	E(L)	377.8cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Peak	E(L)	380cm⁻¹	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Raman Intensity Ratio	E2g/Si and A1g/Si intensity ratios	quasi-linear with layer number	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comp MoS₂ exfoliated on Au substrates of varying thicknesses (2,	—
Strain	biaxial strain	1.1%	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Carrier Concentration	electron concentration	3600000000000cm⁻²	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Flake Size	lateral size	1000um	MoS₂	Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm	—
Flake Size	lateral size	<20um	MoS₂	MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comp	—

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Samples

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

Materials

Why these are connected

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Samples

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

Materials

Why these are connected

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Samples

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

Materials

Why these are connected

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Samples

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

Materials

Why these are connected

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Samples

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

Materials

Why these are connected

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Samples

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

Materials

Why these are connected

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Samples

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

Materials

Why these are connected

Strain-Induced Decoupling Drives Gold-Assisted Exfoliation of Large-Area Monolayer 2D Crystals

Samples

Large-area MoS₂ monolayer exfoliated and adhered on a 10 nm Au film on SiO₂/Si; used for Raman strain/decoupling analysis.

MoS₂ exfoliated on SiO₂(100 nm)/Si reference substrate, comprising flakes of various thicknesses.

MoS₂ exfoliated on Au substrates of varying thicknesses (2, 5, and 10 nm), including monolayer and few-layer regions.

Materials

Why these are connected

Characterization

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