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Tuning Terahertz Optomechanics of MoS2 Bilayers with Homogeneous in-plane Strain | Matter42 Literature

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Phonon

Tuning Terahertz Optomechanics of MoS₂ Bilayers with Homogeneous in-plane Strain

S. Patel, Jose D. Mella, S. Puri, Salvador Barraza-Lopez et al.

arXiv·2026·10.1021/acs.nanolett.4c05079·arXiv:2602.03996

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

As-grown MoS₂ monolayer on SiO₂ substrate.

2 characterizations3 properties4 figures

ExperimentalMoS₂Studied Material

As-grown 2H MoS₂ bilayer on SiO₂ substrate.

2 characterizations6 properties4 figures

ExperimentalMoS₂Studied Material

As-grown 2R MoS₂ bilayer on SiO₂ substrate.

1 characterization1 figure

ExperimentalMoS₂Studied Material

As-grown MoS₂ monolayer on Si₃N₄ substrate.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

As-grown MoS₂ bilayer on Si₃N₄ substrate.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxed control.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed control.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

DFT-relaxed strain-free 2H MoS₂ bilayer.

1 characterization13 properties2 figures

Simulated Supercell DftMoS₂Studied Material

DFT-relaxed strain-free 2R MoS₂ bilayer.

1 characterization3 properties2 figures

Simulated Supercell DftMoS₂Studied Material

Materials

MoS₂

MoS₂

Studied Material

Also known as

molybdenum disulfide

studied material

SiO₂

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Phonon

Tuning Terahertz Optomechanics of MoS₂ Bilayers with Homogeneous in-plane Strain

S. Patel, Jose D. Mella, S. Puri, Salvador Barraza-Lopez et al.

arXiv·2026·10.1021/acs.nanolett.4c05079·arXiv:2602.03996

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

As-grown MoS₂ monolayer on SiO₂ substrate.

2 characterizations3 properties4 figures

ExperimentalMoS₂Studied Material

As-grown 2H MoS₂ bilayer on SiO₂ substrate.

2 characterizations6 properties4 figures

ExperimentalMoS₂Studied Material

As-grown 2R MoS₂ bilayer on SiO₂ substrate.

1 characterization1 figure

ExperimentalMoS₂Studied Material

As-grown MoS₂ monolayer on Si₃N₄ substrate.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

As-grown MoS₂ bilayer on Si₃N₄ substrate.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxed control.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed control.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

DFT-relaxed strain-free 2H MoS₂ bilayer.

1 characterization13 properties2 figures

Simulated Supercell DftMoS₂Studied Material

DFT-relaxed strain-free 2R MoS₂ bilayer.

1 characterization3 properties2 figures

Simulated Supercell DftMoS₂Studied Material

Materials

MoS₂

MoS₂

Studied Material

Also known as

molybdenum disulfide

studied material

SiO₂

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Phonon

Tuning Terahertz Optomechanics of MoS₂ Bilayers with Homogeneous in-plane Strain

S. Patel, Jose D. Mella, S. Puri, Salvador Barraza-Lopez et al.

arXiv·2026·10.1021/acs.nanolett.4c05079·arXiv:2602.03996

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

As-grown MoS₂ monolayer on SiO₂ substrate.

2 characterizations3 properties4 figures

ExperimentalMoS₂Studied Material

As-grown 2H MoS₂ bilayer on SiO₂ substrate.

2 characterizations6 properties4 figures

ExperimentalMoS₂Studied Material

As-grown 2R MoS₂ bilayer on SiO₂ substrate.

1 characterization1 figure

ExperimentalMoS₂Studied Material

As-grown MoS₂ monolayer on Si₃N₄ substrate.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

As-grown MoS₂ bilayer on Si₃N₄ substrate.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxed control.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed control.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

DFT-relaxed strain-free 2H MoS₂ bilayer.

1 characterization13 properties2 figures

Simulated Supercell DftMoS₂Studied Material

DFT-relaxed strain-free 2R MoS₂ bilayer.

1 characterization3 properties2 figures

Simulated Supercell DftMoS₂Studied Material

Materials

MoS₂

MoS₂

Studied Material

Also known as

molybdenum disulfide

studied material

SiO₂

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Paper details

Research paper

Experimental GrowthExperimental CharacterizationComputational DFTComputed Phonon

Tuning Terahertz Optomechanics of MoS₂ Bilayers with Homogeneous in-plane Strain

S. Patel, Jose D. Mella, S. Puri, Salvador Barraza-Lopez et al.

arXiv·2026·10.1021/acs.nanolett.4c05079·arXiv:2602.03996

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

As-grown MoS₂ monolayer on SiO₂ substrate.

2 characterizations3 properties4 figures

ExperimentalMoS₂Studied Material

As-grown 2H MoS₂ bilayer on SiO₂ substrate.

2 characterizations6 properties4 figures

ExperimentalMoS₂Studied Material

As-grown 2R MoS₂ bilayer on SiO₂ substrate.

1 characterization1 figure

ExperimentalMoS₂Studied Material

As-grown MoS₂ monolayer on Si₃N₄ substrate.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

As-grown MoS₂ bilayer on Si₃N₄ substrate.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxed control.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed control.

1 characterization2 properties3 figures

ExperimentalMoS₂Studied Material

DFT-relaxed strain-free 2H MoS₂ bilayer.

1 characterization13 properties2 figures

Simulated Supercell DftMoS₂Studied Material

DFT-relaxed strain-free 2R MoS₂ bilayer.

1 characterization3 properties2 figures

Simulated Supercell DftMoS₂Studied Material

Materials

MoS₂

MoS₂

Studied Material

Also known as

molybdenum disulfide

studied material

SiO₂

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Properties

Type	Label	Value	Material	Sample	Condition	Source
Energy Difference	2H vs 2R bilayer phase stability difference	0.7meV	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	403cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	385cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ monolayer on Si₃N₄ substrate.		—
Raman Peak	A1g	403cm⁻¹	MoS₂	As-grown MoS₂ monolayer on Si₃N₄ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ bilayer on Si₃N₄ substrate.		—
Raman Peak	A1g	405cm⁻¹	MoS₂	As-grown MoS₂ bilayer on Si₃N₄ substrate.		—
Raman Peak	E1g2	379cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	402cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	405cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxe		—
Raman Peak	A1g	403cm⁻¹	MoS₂	Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxe		—
Raman Peak	E1g2	385cm⁻¹	MoS₂	Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed		—
Raman Peak	A1g	403cm⁻¹	MoS₂	Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed		—
Raman Peak	E1g2	368cm⁻¹	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	A1g	396cm⁻¹	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	E1g2	364cm⁻¹	MoS₂	DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	A1g	394cm⁻¹	MoS₂	DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	2g breathing mode	37.7cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	2g breathing mode	40.4cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	2g breathing mode	1.13THz	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	2g breathing mode	1.21THz	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	effective out-of-plane Poisson ratio	0.19	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	effective out-of-plane Poisson ratio	0.24	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	Gruneisen parameter	14	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	Gruneisen parameter	20	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	strain-tuning rate of intralayer E1g2 mode	-0.1THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	theoretical strain-tuning rate of intralayer E1g2 mode	-0.15THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	strain-tuning rate of interlayer 2g breathing mode	0.11THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	theoretical strain-tuning rate of interlayer 2g breathing mode	0.01THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Ir Band Shift	band shift	0.3cm⁻¹	MoS₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Energy Difference	2H vs 2R bilayer phase stability difference	0.7meV	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	403cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	385cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ monolayer on Si₃N₄ substrate.		—
Raman Peak	A1g	403cm⁻¹	MoS₂	As-grown MoS₂ monolayer on Si₃N₄ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ bilayer on Si₃N₄ substrate.		—
Raman Peak	A1g	405cm⁻¹	MoS₂	As-grown MoS₂ bilayer on Si₃N₄ substrate.		—
Raman Peak	E1g2	379cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	402cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	405cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxe		—
Raman Peak	A1g	403cm⁻¹	MoS₂	Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxe		—
Raman Peak	E1g2	385cm⁻¹	MoS₂	Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed		—
Raman Peak	A1g	403cm⁻¹	MoS₂	Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed		—
Raman Peak	E1g2	368cm⁻¹	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	A1g	396cm⁻¹	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	E1g2	364cm⁻¹	MoS₂	DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	A1g	394cm⁻¹	MoS₂	DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	2g breathing mode	37.7cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	2g breathing mode	40.4cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	2g breathing mode	1.13THz	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	2g breathing mode	1.21THz	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	effective out-of-plane Poisson ratio	0.19	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	effective out-of-plane Poisson ratio	0.24	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	Gruneisen parameter	14	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	Gruneisen parameter	20	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	strain-tuning rate of intralayer E1g2 mode	-0.1THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	theoretical strain-tuning rate of intralayer E1g2 mode	-0.15THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	strain-tuning rate of interlayer 2g breathing mode	0.11THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	theoretical strain-tuning rate of interlayer 2g breathing mode	0.01THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Ir Band Shift	band shift	0.3cm⁻¹	MoS₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Energy Difference	2H vs 2R bilayer phase stability difference	0.7meV	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	403cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	385cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ monolayer on Si₃N₄ substrate.		—
Raman Peak	A1g	403cm⁻¹	MoS₂	As-grown MoS₂ monolayer on Si₃N₄ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ bilayer on Si₃N₄ substrate.		—
Raman Peak	A1g	405cm⁻¹	MoS₂	As-grown MoS₂ bilayer on Si₃N₄ substrate.		—
Raman Peak	E1g2	379cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	402cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	405cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxe		—
Raman Peak	A1g	403cm⁻¹	MoS₂	Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxe		—
Raman Peak	E1g2	385cm⁻¹	MoS₂	Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed		—
Raman Peak	A1g	403cm⁻¹	MoS₂	Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed		—
Raman Peak	E1g2	368cm⁻¹	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	A1g	396cm⁻¹	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	E1g2	364cm⁻¹	MoS₂	DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	A1g	394cm⁻¹	MoS₂	DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	2g breathing mode	37.7cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	2g breathing mode	40.4cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	2g breathing mode	1.13THz	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	2g breathing mode	1.21THz	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	effective out-of-plane Poisson ratio	0.19	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	effective out-of-plane Poisson ratio	0.24	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	Gruneisen parameter	14	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	Gruneisen parameter	20	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	strain-tuning rate of intralayer E1g2 mode	-0.1THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	theoretical strain-tuning rate of intralayer E1g2 mode	-0.15THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	strain-tuning rate of interlayer 2g breathing mode	0.11THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	theoretical strain-tuning rate of interlayer 2g breathing mode	0.01THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Ir Band Shift	band shift	0.3cm⁻¹	MoS₂	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Energy Difference	2H vs 2R bilayer phase stability difference	0.7meV	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	403cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	385cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ monolayer on Si₃N₄ substrate.		—
Raman Peak	A1g	403cm⁻¹	MoS₂	As-grown MoS₂ monolayer on Si₃N₄ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown MoS₂ bilayer on Si₃N₄ substrate.		—
Raman Peak	A1g	405cm⁻¹	MoS₂	As-grown MoS₂ bilayer on Si₃N₄ substrate.		—
Raman Peak	E1g2	379cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	402cm⁻¹	MoS₂	As-grown MoS₂ monolayer on SiO₂ substrate.		—
Raman Peak	A1g	405cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	E1g2	384cm⁻¹	MoS₂	Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxe		—
Raman Peak	A1g	403cm⁻¹	MoS₂	Transferred MoS₂ monolayer on SiO₂/Si, used as strain-relaxe		—
Raman Peak	E1g2	385cm⁻¹	MoS₂	Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed		—
Raman Peak	A1g	403cm⁻¹	MoS₂	Transferred MoS₂ bilayer on SiO₂/Si, used as strain-relaxed		—
Raman Peak	E1g2	368cm⁻¹	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	A1g	396cm⁻¹	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	E1g2	364cm⁻¹	MoS₂	DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	A1g	394cm⁻¹	MoS₂	DFT-relaxed strain-free 2R MoS₂ bilayer.		—
Raman Peak	2g breathing mode	37.7cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	2g breathing mode	40.4cm⁻¹	MoS₂	As-grown 2H MoS₂ bilayer on SiO₂ substrate.		—
Raman Peak	2g breathing mode	1.13THz	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	2g breathing mode	1.21THz	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	effective out-of-plane Poisson ratio	0.19	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	effective out-of-plane Poisson ratio	0.24	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	Gruneisen parameter	14	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	Gruneisen parameter	20	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	strain-tuning rate of intralayer E1g2 mode	-0.1THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	theoretical strain-tuning rate of intralayer E1g2 mode	-0.15THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	strain-tuning rate of interlayer 2g breathing mode	0.11THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Raman Peak	theoretical strain-tuning rate of interlayer 2g breathing mode	0.01THz/%	MoS₂	DFT-relaxed strain-free 2H MoS₂ bilayer.		—
Ir Band Shift	band shift	0.3cm⁻¹	MoS₂	—	—	—