Research paper
Experimental GrowthExperimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Tem Feature Size | nanotube diameter | 118nm | — | |||
| Fet Sheet Resistance | two-terminal resistance median (Bi contacts) | 500000ohm | — | |||
| Fet Sheet Resistance | two-terminal resistance median (Ti contacts) | 9100000ohm | — | |||
| Fet Sheet Resistance | minimum two-terminal resistance | 50000ohm | — | |||
| Transport Current Response | I(VSD) comparison | much improved linearity for Bi contacts relative to Ti contacts | — | |||
| Fet Threshold Voltage | conductance cutoff voltage | -20V | — | |||
| Schottky Barrier Height | barrier height per contact side | 0.2eV | — | |||
| Temperature | base temperature | 15mK | — | |||
| Temperature | single-level transport onset temperature | 100mK | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Tem Feature Size | nanotube diameter | 118nm | — | |||
| Fet Sheet Resistance | two-terminal resistance median (Bi contacts) | 500000ohm | — | |||
| Fet Sheet Resistance | two-terminal resistance median (Ti contacts) | 9100000ohm | — | |||
| Fet Sheet Resistance | minimum two-terminal resistance | 50000ohm | — | |||
| Transport Current Response | I(VSD) comparison | much improved linearity for Bi contacts relative to Ti contacts | — | |||
| Fet Threshold Voltage | conductance cutoff voltage | -20V | — | |||
| Schottky Barrier Height | barrier height per contact side | 0.2eV | — | |||
| Temperature | base temperature | 15mK | — | |||
| Temperature | single-level transport onset temperature | 100mK | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Tem Feature Size | nanotube diameter | 118nm | — | |||
| Fet Sheet Resistance | two-terminal resistance median (Bi contacts) | 500000ohm | — | |||
| Fet Sheet Resistance | two-terminal resistance median (Ti contacts) | 9100000ohm | — | |||
| Fet Sheet Resistance | minimum two-terminal resistance | 50000ohm | — | |||
| Transport Current Response | I(VSD) comparison | much improved linearity for Bi contacts relative to Ti contacts | — | |||
| Fet Threshold Voltage | conductance cutoff voltage | -20V | — | |||
| Schottky Barrier Height | barrier height per contact side | 0.2eV | — | |||
| Temperature | base temperature | 15mK | — | |||
| Temperature | single-level transport onset temperature | 100mK | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Tem Feature Size | nanotube diameter | 118nm | — | |||
| Fet Sheet Resistance | two-terminal resistance median (Bi contacts) | 500000ohm | — | |||
| Fet Sheet Resistance | two-terminal resistance median (Ti contacts) | 9100000ohm | — | |||
| Fet Sheet Resistance | minimum two-terminal resistance | 50000ohm | — | |||
| Transport Current Response | I(VSD) comparison | much improved linearity for Bi contacts relative to Ti contacts | — | |||
| Fet Threshold Voltage | conductance cutoff voltage | -20V | — | |||
| Schottky Barrier Height | barrier height per contact side | 0.2eV | — | |||
| Temperature | base temperature | 15mK | — | |||
| Temperature | single-level transport onset temperature | 100mK | — |