Research paperExperimental GrowthExperimental CharacterizationNon-Destructive Low-Temperature Contacts to MoS₂ Nanoribbon and Nanotube Quantum DotsRobin T. K. Schock, Jonathan Neuwald, Wolfgang Möckel, Matthias Kronseder et al.Advanced Materials·2023·arXiv:2209.15515AbstractMoS₂ nanoribbons and nanotubes are grown by chemical transport reaction and integrated into devices with bismuth/gold contacts. The work shows that Bi contacts substantially reduce room-temperature resistance, preserve the nanomaterial, and enable cryogenic Coulomb blockade and single-level transport in MoS₂ quantum dot devices.Read more
Bi/Au-contacted MoS₂ nanoribbon or nanotube device on highly doped Si/SiO₂ substrate.5 preparations6 characterizations7 properties2 figuresExperimentalMoS₂Studied MaterialBiCapping Or ContactAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricExpand
Titanium-based MoS₂ device used as a comparison sample in room-temperature transport measurements.5 preparations4 characterizations4 properties2 figuresExperimentalMoS₂Studied MaterialAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNon-Destructive Low-Temperature Contacts to MoS₂ Nanoribbon and Nanotube Quantum DotsRobin T. K. Schock, Jonathan Neuwald, Wolfgang Möckel, Matthias Kronseder et al.Advanced Materials·2023·arXiv:2209.15515AbstractMoS₂ nanoribbons and nanotubes are grown by chemical transport reaction and integrated into devices with bismuth/gold contacts. The work shows that Bi contacts substantially reduce room-temperature resistance, preserve the nanomaterial, and enable cryogenic Coulomb blockade and single-level transport in MoS₂ quantum dot devices.Read more
Bi/Au-contacted MoS₂ nanoribbon or nanotube device on highly doped Si/SiO₂ substrate.5 preparations6 characterizations7 properties2 figuresExperimentalMoS₂Studied MaterialBiCapping Or ContactAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricExpand
Titanium-based MoS₂ device used as a comparison sample in room-temperature transport measurements.5 preparations4 characterizations4 properties2 figuresExperimentalMoS₂Studied MaterialAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNon-Destructive Low-Temperature Contacts to MoS₂ Nanoribbon and Nanotube Quantum DotsRobin T. K. Schock, Jonathan Neuwald, Wolfgang Möckel, Matthias Kronseder et al.Advanced Materials·2023·arXiv:2209.15515AbstractMoS₂ nanoribbons and nanotubes are grown by chemical transport reaction and integrated into devices with bismuth/gold contacts. The work shows that Bi contacts substantially reduce room-temperature resistance, preserve the nanomaterial, and enable cryogenic Coulomb blockade and single-level transport in MoS₂ quantum dot devices.Read more
Bi/Au-contacted MoS₂ nanoribbon or nanotube device on highly doped Si/SiO₂ substrate.5 preparations6 characterizations7 properties2 figuresExperimentalMoS₂Studied MaterialBiCapping Or ContactAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricExpand
Titanium-based MoS₂ device used as a comparison sample in room-temperature transport measurements.5 preparations4 characterizations4 properties2 figuresExperimentalMoS₂Studied MaterialAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationNon-Destructive Low-Temperature Contacts to MoS₂ Nanoribbon and Nanotube Quantum DotsRobin T. K. Schock, Jonathan Neuwald, Wolfgang Möckel, Matthias Kronseder et al.Advanced Materials·2023·arXiv:2209.15515AbstractMoS₂ nanoribbons and nanotubes are grown by chemical transport reaction and integrated into devices with bismuth/gold contacts. The work shows that Bi contacts substantially reduce room-temperature resistance, preserve the nanomaterial, and enable cryogenic Coulomb blockade and single-level transport in MoS₂ quantum dot devices.Read more
Bi/Au-contacted MoS₂ nanoribbon or nanotube device on highly doped Si/SiO₂ substrate.5 preparations6 characterizations7 properties2 figuresExperimentalMoS₂Studied MaterialBiCapping Or ContactAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricExpand
Titanium-based MoS₂ device used as a comparison sample in room-temperature transport measurements.5 preparations4 characterizations4 properties2 figuresExperimentalMoS₂Studied MaterialAuCapping Or ContactSiSubstrate / DielectricSiO₂Substrate / DielectricExpand