Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Bozo Vareskic; Finn G. Kennedy; Takashi Taniguchi; Kenji Watanabe; Kenji Yasuda; Daniel C. Ralph

doi:10.5281/zenodo.15159564

Paper details

Research paper

Experimental CharacterizationTheoretical

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Bozo Vareskic, Finn G. Kennedy, Takashi Taniguchi, Kenji Watanabe et al.

arXiv preprint·2025·10.5281/zenodo.15159564·arXiv:2504.08899

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

1 preparation1 characterization4 properties3 figures

ExperimentalCStudied MaterialBNStudied MaterialCReference MaterialBNSubstrate / Dielectric

Materials

graphene

Studied Material

Also known as

single-layer graphene

Variables

layer_count= 1

studied material

hexagonal boron nitride

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	TER maximum	7.8%	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet On Off Ratio	TER minimum	-3.2%	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet Threshold Voltage	coercive field estimate	0.44V	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet Sheet Resistance	minimum differential conductance	240nS	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—

Properties

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	TER maximum	7.8%	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet On Off Ratio	TER minimum	-3.2%	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet Threshold Voltage	coercive field estimate	0.44V	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet Sheet Resistance	minimum differential conductance	240nS	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—

Properties

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	TER maximum	7.8%	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet On Off Ratio	TER minimum	-3.2%	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet Threshold Voltage	coercive field estimate	0.44V	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet Sheet Resistance	minimum differential conductance	240nS	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—

Properties

Type	Label	Value	Material	Sample	Source
Fet On Off Ratio	TER maximum	7.8%	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet On Off Ratio	TER minimum	-3.2%	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet Threshold Voltage	coercive field estimate	0.44V	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—
Fet Sheet Resistance	minimum differential conductance	240nS	C BN	Electrically gated sliding ferroelectric tunnel junction wit	—

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Samples

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

Materials

Why these are connected

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Samples

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

Materials

Why these are connected

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Samples

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

Materials

Why these are connected

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Samples

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

Materials

Why these are connected

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Samples

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

Materials

Why these are connected

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Samples

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

Materials

Why these are connected

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Samples

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

Materials

Why these are connected

Gate-tunable electroresistance in a sliding ferroelectric tunnel junction

Samples

Electrically gated sliding ferroelectric tunnel junction with monolayer graphene electrodes separated by parallel-stacked bilayer hBN, encapsulated by hBN dielectric layers and gated by graphite.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations