Research paperExperimental CharacterizationObservation of single antiferromagnetic magnon modes through tunnelling spectroscopy of spin-1/2 Kitaev system α-RuCl₃Servet Ozdemir, Mikhail Kashchenko, Kostya S. Novoselov2026·10.1021/acs.nanolett.3c01611·arXiv:2605.00202AbstractThe small-gap room-temperature semiconductor α-RuCl3, which is known to undergo a Mott-Hubbard transition at low temperatures, is one of the most promising candidates for realisation of an exotic matter form, the quantum spin liquid state, which may have applications in quantum computing. Although extensively investigated by neutron scattering techniques, electronic study of this system in the form of van der Waals heterostructures has been limited mainly to graphene proximity. Here we report a systematic study of planar and tunnelling electronic properties of α-RuCl₃ films, where we observe an n-type field effect on α-RuCl₃ films at room temperature, with a Mott insulator nature onset below 120 K. For films of three-layer thickness and below we find inelastic scattering features, below the Néel temperature of 7-14.5 K, which we attribute to single magnon modes. Our study confirms preserved low-temperature signatures of the zigzag antiferromagnetic order in the atomically thin limit and its single magnon modes within the continuum through tunnelling spectroscopy.Read more
Exfoliated tri-layer α-RuCl₃ flake used for planar transport measurement with 4-probe geometry.1 characterization5 properties1 figureExperimentalRuCl₃Studied MaterialExpand
Monolayer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization3 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Bilayer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization2 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Tri-layer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization3 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationObservation of single antiferromagnetic magnon modes through tunnelling spectroscopy of spin-1/2 Kitaev system α-RuCl₃Servet Ozdemir, Mikhail Kashchenko, Kostya S. Novoselov2026·10.1021/acs.nanolett.3c01611·arXiv:2605.00202AbstractThe small-gap room-temperature semiconductor α-RuCl3, which is known to undergo a Mott-Hubbard transition at low temperatures, is one of the most promising candidates for realisation of an exotic matter form, the quantum spin liquid state, which may have applications in quantum computing. Although extensively investigated by neutron scattering techniques, electronic study of this system in the form of van der Waals heterostructures has been limited mainly to graphene proximity. Here we report a systematic study of planar and tunnelling electronic properties of α-RuCl₃ films, where we observe an n-type field effect on α-RuCl₃ films at room temperature, with a Mott insulator nature onset below 120 K. For films of three-layer thickness and below we find inelastic scattering features, below the Néel temperature of 7-14.5 K, which we attribute to single magnon modes. Our study confirms preserved low-temperature signatures of the zigzag antiferromagnetic order in the atomically thin limit and its single magnon modes within the continuum through tunnelling spectroscopy.Read more
Exfoliated tri-layer α-RuCl₃ flake used for planar transport measurement with 4-probe geometry.1 characterization5 properties1 figureExperimentalRuCl₃Studied MaterialExpand
Monolayer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization3 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Bilayer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization2 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Tri-layer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization3 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationObservation of single antiferromagnetic magnon modes through tunnelling spectroscopy of spin-1/2 Kitaev system α-RuCl₃Servet Ozdemir, Mikhail Kashchenko, Kostya S. Novoselov2026·10.1021/acs.nanolett.3c01611·arXiv:2605.00202AbstractThe small-gap room-temperature semiconductor α-RuCl3, which is known to undergo a Mott-Hubbard transition at low temperatures, is one of the most promising candidates for realisation of an exotic matter form, the quantum spin liquid state, which may have applications in quantum computing. Although extensively investigated by neutron scattering techniques, electronic study of this system in the form of van der Waals heterostructures has been limited mainly to graphene proximity. Here we report a systematic study of planar and tunnelling electronic properties of α-RuCl₃ films, where we observe an n-type field effect on α-RuCl₃ films at room temperature, with a Mott insulator nature onset below 120 K. For films of three-layer thickness and below we find inelastic scattering features, below the Néel temperature of 7-14.5 K, which we attribute to single magnon modes. Our study confirms preserved low-temperature signatures of the zigzag antiferromagnetic order in the atomically thin limit and its single magnon modes within the continuum through tunnelling spectroscopy.Read more
Exfoliated tri-layer α-RuCl₃ flake used for planar transport measurement with 4-probe geometry.1 characterization5 properties1 figureExperimentalRuCl₃Studied MaterialExpand
Monolayer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization3 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Bilayer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization2 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Tri-layer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization3 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Research paperExperimental CharacterizationObservation of single antiferromagnetic magnon modes through tunnelling spectroscopy of spin-1/2 Kitaev system α-RuCl₃Servet Ozdemir, Mikhail Kashchenko, Kostya S. Novoselov2026·10.1021/acs.nanolett.3c01611·arXiv:2605.00202AbstractThe small-gap room-temperature semiconductor α-RuCl3, which is known to undergo a Mott-Hubbard transition at low temperatures, is one of the most promising candidates for realisation of an exotic matter form, the quantum spin liquid state, which may have applications in quantum computing. Although extensively investigated by neutron scattering techniques, electronic study of this system in the form of van der Waals heterostructures has been limited mainly to graphene proximity. Here we report a systematic study of planar and tunnelling electronic properties of α-RuCl₃ films, where we observe an n-type field effect on α-RuCl₃ films at room temperature, with a Mott insulator nature onset below 120 K. For films of three-layer thickness and below we find inelastic scattering features, below the Néel temperature of 7-14.5 K, which we attribute to single magnon modes. Our study confirms preserved low-temperature signatures of the zigzag antiferromagnetic order in the atomically thin limit and its single magnon modes within the continuum through tunnelling spectroscopy.Read more
Exfoliated tri-layer α-RuCl₃ flake used for planar transport measurement with 4-probe geometry.1 characterization5 properties1 figureExperimentalRuCl₃Studied MaterialExpand
Monolayer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization3 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Bilayer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization2 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand
Tri-layer α-RuCl₃ tunnel junction device encapsulated in hBN and sandwiched between graphene electrodes.1 characterization3 properties3 figuresExperimentalRuCl₃Studied MaterialCCapping Or ContactBNSubstrate / DielectricExpand