Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures

Takuya Iwasaki; Yoshifumi Morita; Kenji Watanabe; Takashi Taniguchi

doi:10.1103/physrevb.109.075409

Paper

Atlas literature

Research paper

Experimental GrowthExperimental Characterization

Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures

Takuya Iwasaki, Yoshifumi Morita, Kenji Watanabe, Takashi Taniguchi

2024·10.1103/physrevb.109.075409·arXiv:2410.05636

Samples

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Dual-gated hBN/bilayer-graphene/hBN Hall-bar device D₁ fabricated by mechanical exfoliation, dry transfer, lithography, etching, and edge-contact metallization.

4 preparations2 characterizations10 properties2 figures

ExperimentalCStudied MaterialhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricTiCapping Or ContactAuCapping Or ContactCrCapping Or Contact

Dual-gated hBN/bilayer-graphene/hBN Hall-bar device D₂ fabricated from the same stack, close in alignment angle to D1.

4 preparations2 characterizations2 properties2 figures

ExperimentalCStudied MaterialhBNStudied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricTiCapping Or ContactAuCapping Or ContactCrCapping Or Contact

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